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<p>Lead toxicity and long-term instability remain the primary challenges hindering the large-scale commercialization of perovskite solar cells (PSCs). In this study, a theoretical investigation of an environmentally benign and stable CsSn<sub>0.5</sub>Ge<sub>0.5</sub>I<sub>3</sub> based PSCs is presented. Also, the effects of key issues such as operating temperature, defect density, back-contact work function, parasitic resistances, and the thickness of the absorber layer were evaluated. In fact, the use of a low-cost and lead-free cesium tin germanium triiodide absorber was used in the current experiment. In fact, as a result of optimizing the thickness of the absorber layer to a thickness of 300&#xa0;nm, the device yielded an efficiency of 29.06%, a fill factor of 82.16%, a short-circuit current density of 35.41&#xa0;mA/cm², and an open-circuit voltage of 0.99&#xa0;V. Additionally, the capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of the solar cell have been examined. Overall, these results may guide researchers in photovoltaic (PV) technology toward the development of cost-effective, high-efficiency, and lead-free solar cells utilizing CsSn<sub>0.5</sub>Ge<sub>0.5</sub>I<sub>3</sub> as the perovskite absorber layer.</p>

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Performance optimization of cesium halide perovskite solar cells through SCAPS-1D simulation

  • 期刊论文

  • 发表日期：

    2026年6月23日

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  • Vaibhava Srivastava,
  • Alok Kumar Patel,
  • Deepak Kumar Singh

摘要

Lead toxicity and long-term instability remain the primary challenges hindering the large-scale commercialization of perovskite solar cells (PSCs). In this study, a theoretical investigation of an environmentally benign and stable CsSn0.5Ge0.5I3 based PSCs is presented. Also, the effects of key issues such as operating temperature, defect density, back-contact work function, parasitic resistances, and the thickness of the absorber layer were evaluated. In fact, the use of a low-cost and lead-free cesium tin germanium triiodide absorber was used in the current experiment. In fact, as a result of optimizing the thickness of the absorber layer to a thickness of 300 nm, the device yielded an efficiency of 29.06%, a fill factor of 82.16%, a short-circuit current density of 35.41 mA/cm², and an open-circuit voltage of 0.99 V. Additionally, the capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of the solar cell have been examined. Overall, these results may guide researchers in photovoltaic (PV) technology toward the development of cost-effective, high-efficiency, and lead-free solar cells utilizing CsSn0.5Ge0.5I3 as the perovskite absorber layer.