<p>The origin of stress in thin films is generally associated with the presence of grain boundaries owing to the surface curvature. This work established a two-dimensional (2D) distribution model for stress in thin films near grain boundary regions based on the premise that atoms are inserted into grain boundaries due to differences in chemical potential near grain boundaries. The model calculates 2D stress distribution by considering the variation in grain surface curvature. The results showed that compressive stress was developed near grain boundary region owing to the competition between the tensile and compressive stress. It explains stress relaxation and its evolution in thin films by analyzing the surface profile, highlighting that the stresses in thin films exhibit a relaxed compressive stress near grain boundaries as the groove deepens. However, the predicted stress level is significantly low owing to the regardless of vacancy induced stress with surface curvature stress considered only. Surface curvature framework provides the possible basis to give a live visualizing technique for surface monitoring.</p>