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<p>Using X-ray photoelectron spectroscopy (XPS), we show that Au forms an Ohmic contact with the surface of the narrow-bandgap Mott insulator Sr<sub>3</sub>Ir<sub>2</sub>O<sub>7</sub> thin films. XPS reveals no significant binding energy shift with increasing Au overlayer thickness on epitaxial Sr<sub>3</sub>Ir<sub>2</sub>O<sub>7</sub>(001) thin films, consistent with the linear current-voltage (<i>I</i>-<i>V</i>) behavior and indicative of negligible band bending. The absence of Schottky barrier formation at the Au/Sr<sub>3</sub>Ir<sub>2</sub>O<sub>7</sub> interface corroborates the metallic surface character of the Sr<sub>3</sub>Ir<sub>2</sub>O<sub>7</sub> thin film, as observed in angle-resolved photoemission spectroscopy (ARPES) studies, suggesting that the interface behaves effectively as a metal-on-metal contact. Furthermore, XPS points to the presence of distinct surface/interface and bulk electronic states for Sr<sub>3</sub>Ir<sub>2</sub>O<sub>7</sub>. This study provides critical material information for designing iridate-based electronic devices.</p>

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Ohmic contact formation at the Au/Sr3Ir2O7 interface

  • 期刊论文

  • 发表日期：

    2026年6月19日

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  • Peace Ikeoluwa Adegbite,
  • M. Zaid Zaz,
  • Yuanyuan Zhang,
  • Takashi Komesu,
  • Shiv Kumar,
  • Amit Kumar,
  • Yudai Miyai,
  • Kenya Shimada,
  • Xia Hong,
  • Peter A. Dowben

摘要

Using X-ray photoelectron spectroscopy (XPS), we show that Au forms an Ohmic contact with the surface of the narrow-bandgap Mott insulator Sr3Ir2O7 thin films. XPS reveals no significant binding energy shift with increasing Au overlayer thickness on epitaxial Sr3Ir2O7(001) thin films, consistent with the linear current-voltage (I-V) behavior and indicative of negligible band bending. The absence of Schottky barrier formation at the Au/Sr3Ir2O7 interface corroborates the metallic surface character of the Sr3Ir2O7 thin film, as observed in angle-resolved photoemission spectroscopy (ARPES) studies, suggesting that the interface behaves effectively as a metal-on-metal contact. Furthermore, XPS points to the presence of distinct surface/interface and bulk electronic states for Sr3Ir2O7. This study provides critical material information for designing iridate-based electronic devices.