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<p>Sol-gel spin coating was used to fabricate Mg-doped ZnO (MZO) thin films with varying Mg concentrations (0–9 at%) on single-crystal silicon substrates. This study thoroughly examines the microstructural and optoelectronic evolution of the films by systematically mapping the synergistic effects of two key experimental parameters: Mg dopant concentration and post-deposition annealing temperature (400&#xa0;°C and 500&#xa0;°C). A polycrystalline wurtzite structure was confirmed by X-ray diffraction, which also revealed a clear competitive mechanism: higher doping levels (≥ 4%) cause lattice strain that outweighs thermal benefits, resulting in significant structural degradation, while annealing at 500&#xa0;°C dramatically enhances c-axis orientation for undoped and lightly doped (2%) samples. According to morphological analysis using FESEM and AFM, high temperatures promote grain enlargement and defect healing, while magnesium acts as a grain growth inhibitor, increasing surface roughness. Blue-shifted near-band-edge photoluminescence emissions support optical spectroscopy’s demonstration of tunable bandgap engineering, with energies expanding from 3.20&#xa0;eV to 3.34&#xa0;eV. This work creates ideal conditions for incorporating superior MZO films into silicon-based optoelectronic devices by methodically mapping the interaction between thermal processing and composition.</p>

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Synergistic effects of Mg concentration and annealing temperature on the structural and optoelectronic properties of ZnO thin films on silicon

  • 期刊论文

  • 发表日期：

    2026年6月24日

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  • Niamat Forazi Bappy,
  • Shanmugan Subramani

摘要

Sol-gel spin coating was used to fabricate Mg-doped ZnO (MZO) thin films with varying Mg concentrations (0–9 at%) on single-crystal silicon substrates. This study thoroughly examines the microstructural and optoelectronic evolution of the films by systematically mapping the synergistic effects of two key experimental parameters: Mg dopant concentration and post-deposition annealing temperature (400 °C and 500 °C). A polycrystalline wurtzite structure was confirmed by X-ray diffraction, which also revealed a clear competitive mechanism: higher doping levels (≥ 4%) cause lattice strain that outweighs thermal benefits, resulting in significant structural degradation, while annealing at 500 °C dramatically enhances c-axis orientation for undoped and lightly doped (2%) samples. According to morphological analysis using FESEM and AFM, high temperatures promote grain enlargement and defect healing, while magnesium acts as a grain growth inhibitor, increasing surface roughness. Blue-shifted near-band-edge photoluminescence emissions support optical spectroscopy’s demonstration of tunable bandgap engineering, with energies expanding from 3.20 eV to 3.34 eV. This work creates ideal conditions for incorporating superior MZO films into silicon-based optoelectronic devices by methodically mapping the interaction between thermal processing and composition.