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<p>In this investigation, the performance of a heterostructure photodetector based on thin films of gadolinium oxide (Gd<sub>2</sub>O<sub>3</sub>) and cerium oxide (CeO<sub>2</sub>) has been demonstrated. The study aims to enhance the photodetection capabilities by incorporating an intermediate layer of CeO<sub>2</sub> between the Gd<sub>2</sub>O<sub>3</sub> thin film. The thin films were deposited on a silicon substrate via the e-beam evaporation technique. The as-deposited structure was found to exhibit a broader UV absorption range, attributed to the incorporation of CeO<sub>2</sub>. Furthermore, the structural and morphological analysis was conducted using X-ray diffraction, field-emission scanning electron microscopy, high-resolution transmission electron microscopy, and atomic force microscopy. The study confirms the successful growth of a thin film with a polycrystalline structure. In addition, the study of optoelectronic properties showed that the proposed heterostructure thin film exhibits an enhanced photosensitivity of over 35 times that of prior single-layer Gd<sub>2</sub>O<sub>3</sub> devices at -2&#xa0;V. In addition, the study demonstrates reliable operation under self-bias conditions. The overall improvement in the device performance after incorporating an intermediate layer presents an effective strategy for enhancing the performance of optoelectronic devices.</p>

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Enhancing ultraviolet photodetection by incorporating CeO2 thin film between Gd2O3 layers

  • 期刊论文

  • 发表日期：

    2026年5月25日

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  • Ph. Nonglen Meitei,
  • Franco Mayanglambam,
  • Shagolsem Romeo Meitei,
  • Naorem Khelchand Singh,
  • P. Chinnamuthu,
  • Yumnam Shantikumar Singh

摘要

In this investigation, the performance of a heterostructure photodetector based on thin films of gadolinium oxide (Gd2O3) and cerium oxide (CeO2) has been demonstrated. The study aims to enhance the photodetection capabilities by incorporating an intermediate layer of CeO2 between the Gd2O3 thin film. The thin films were deposited on a silicon substrate via the e-beam evaporation technique. The as-deposited structure was found to exhibit a broader UV absorption range, attributed to the incorporation of CeO2. Furthermore, the structural and morphological analysis was conducted using X-ray diffraction, field-emission scanning electron microscopy, high-resolution transmission electron microscopy, and atomic force microscopy. The study confirms the successful growth of a thin film with a polycrystalline structure. In addition, the study of optoelectronic properties showed that the proposed heterostructure thin film exhibits an enhanced photosensitivity of over 35 times that of prior single-layer Gd2O3 devices at -2 V. In addition, the study demonstrates reliable operation under self-bias conditions. The overall improvement in the device performance after incorporating an intermediate layer presents an effective strategy for enhancing the performance of optoelectronic devices.