Scholarlink

<p>Spray pyrolysis technique was used to prepare In<sub>2</sub>S<sub>3</sub> thin films from solutions with different thicknesses on clean glass substrates maintained at a substrate temperature of 350&#xa0;°C. X-ray diffraction (XRD) analysis indicates that all films exhibit cubic structure of β-ln<sub>2</sub>S<sub>3</sub> phase with (400) preferential orientation and crystallite size varying in the range 40–49&#xa0;nm. The surface morphology of the layers was analyzed using the AFM technique. Based on UV-VIS-IR analysis, the results revealed that the optical transmittance in the visible range had higher than 60% for all films, except for the 4.26&#xa0;μm thick sample which exhibited only 35%. The optical constants including refractive index and extinction coefficient were estimated by spectroscopic ellipsometry. This technique was also used to determine film thicknesses, which were then confirmed through measurements taken with the mechanical profilometer. The simulated extinction coefficient (k) allowed the determination of optical band gaps, ranging from 2.55 to 2.92&#xa0;eV. Moreover, the dispersion parameters such as dispersion energy (E<sub>d</sub>), oscillator energy (E<sub>0</sub>) and dielectric constants were determined by using Wemple-DiDomenico and Lenvenberg-Marquardt models. Theoretical simulations were carried out to verify the variation of gap energy as a function of film thickness. Moreover, photoconductivity study was carried out by DC electrical characterization.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Thickness-dependent structural, optical, and photoconductive properties of spray-deposited In₂S₃ thin films

  • 期刊论文

  • 发表日期：

    2026年6月16日

查看全文
  • J. Koaib,
  • R. Souissi,
  • Mabrouk Kraini,
  • N. Kamoun,
  • N. Bouguila

摘要

Spray pyrolysis technique was used to prepare In2S3 thin films from solutions with different thicknesses on clean glass substrates maintained at a substrate temperature of 350 °C. X-ray diffraction (XRD) analysis indicates that all films exhibit cubic structure of β-ln2S3 phase with (400) preferential orientation and crystallite size varying in the range 40–49 nm. The surface morphology of the layers was analyzed using the AFM technique. Based on UV-VIS-IR analysis, the results revealed that the optical transmittance in the visible range had higher than 60% for all films, except for the 4.26 μm thick sample which exhibited only 35%. The optical constants including refractive index and extinction coefficient were estimated by spectroscopic ellipsometry. This technique was also used to determine film thicknesses, which were then confirmed through measurements taken with the mechanical profilometer. The simulated extinction coefficient (k) allowed the determination of optical band gaps, ranging from 2.55 to 2.92 eV. Moreover, the dispersion parameters such as dispersion energy (Ed), oscillator energy (E0) and dielectric constants were determined by using Wemple-DiDomenico and Lenvenberg-Marquardt models. Theoretical simulations were carried out to verify the variation of gap energy as a function of film thickness. Moreover, photoconductivity study was carried out by DC electrical characterization.