Electric field-driven non-volatile behavior in (Ta/Co/Pt/Ta)/Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ heterostructure with perpendicular magnetic anisotropy at various temperatures

The electric field mediated of anomalous Hall effect in a multiferroic heterostructure consisting of Ta/Co/Pt/Ta thin film on Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ substrate with perpendicular magnetic anisotropy is investigated at various temperatures. Remarkably, the X-ray Photoelectron Spectroscopy’s results demonstrate that the influence of oxygen on the Co interface can be negligible. The curve of coercive field versus electric field for the Co/Pt thin film shows a change from non-volatile behavior with looplike behavior at 80 K to volatile behavior with butterfly feature at 400 K, which is consistent with change of strain curve—attributed to piezo-strain-mediated magnetoelectric effect. Meanwhile, the piezo-strain effect can mediate the similar variation tendency for the curve of electric field dependence of Hall resistivity at zero magnetic field. Moreover, the non-volatile two-state memory can also be obtained by the application of electric field pulses at various temperatures, which can be used to realize additional functionalities on electronic devices. These results demonstrate the electric field control of anomalous Hall effect in multiferroic heterostructure with perpendicular magnetic anisotropy is potential in the application of magneto-resistive random-access memory with low energy consumption, fast response and high-density storage.