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<p>Titanium-doped indium tin oxide (ITTiO) thin films were deposited on corning glass substrate by pulsed laser deposition technique at substrate temperature ranging from room temperature (RT) to 700 ⁰C for a duration of 90&#xa0;minutes. X-ray diffraction (XRD) revealed the formation of a polycrystalline cubic bixbyite phase of indium oxide in all films, except amorphous nature for RT. The incorporation of titanium into the indium tin oxide lattice at elevated substrate temperatures was observed in the XRD intensity profiles and supported by microstructural parameters obtained from Rietveld refinement and Williamson-Hall analysis. The FESEM images showed densely packed, uniformly nanostructured granular morphology at lower temperature, followed by grain coarsening with increasing temperature. AFM images corroborate these morphological trends, while height-height correlation function analysis quantifies the temperature-driven topological evolution. The extracted interface width, lateral correlation length and local roughness are consistent with the observed microstructure. The power spectral density profile demonstrated the self-affine nature of the film surfaces. The optical properties were investigated using UV–Vis-NIR spectroscopy. The complex dielectric function and complex refractive index were determined using the transfer matrix method, which reveals a transition from insulator to semiconductor behaviour with enhanced free-carrier concentration arising from thermally activated titanium dopants. Urbach energy indicates improved structural ordering and the bandgap increases with temperature. The Four probe technique shows a systematic drop in sheet resistance and improved figure of merit with rising temperatures. These improvements are attributed to enhanced crystallinity, improved lateral grain connectivity, reduced structural disorder and increased free carrier density.</p>

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Temperature-driven structural, optical and electrical evolution in titanium doped indium tin oxide thin films fabricated by pulsed laser deposition

  • 期刊论文

  • 发表日期：

    2026年5月12日

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  • Pooja Kumari,
  • Lwithwsa Swargiary,
  • Ashwini Kumar Sharma

摘要

Titanium-doped indium tin oxide (ITTiO) thin films were deposited on corning glass substrate by pulsed laser deposition technique at substrate temperature ranging from room temperature (RT) to 700 ⁰C for a duration of 90 minutes. X-ray diffraction (XRD) revealed the formation of a polycrystalline cubic bixbyite phase of indium oxide in all films, except amorphous nature for RT. The incorporation of titanium into the indium tin oxide lattice at elevated substrate temperatures was observed in the XRD intensity profiles and supported by microstructural parameters obtained from Rietveld refinement and Williamson-Hall analysis. The FESEM images showed densely packed, uniformly nanostructured granular morphology at lower temperature, followed by grain coarsening with increasing temperature. AFM images corroborate these morphological trends, while height-height correlation function analysis quantifies the temperature-driven topological evolution. The extracted interface width, lateral correlation length and local roughness are consistent with the observed microstructure. The power spectral density profile demonstrated the self-affine nature of the film surfaces. The optical properties were investigated using UV–Vis-NIR spectroscopy. The complex dielectric function and complex refractive index were determined using the transfer matrix method, which reveals a transition from insulator to semiconductor behaviour with enhanced free-carrier concentration arising from thermally activated titanium dopants. Urbach energy indicates improved structural ordering and the bandgap increases with temperature. The Four probe technique shows a systematic drop in sheet resistance and improved figure of merit with rising temperatures. These improvements are attributed to enhanced crystallinity, improved lateral grain connectivity, reduced structural disorder and increased free carrier density.