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<p>This paper presents the results of a UV–Vis spectroscopic study on the optical properties of HDPE polymer films and HDPE/GaAs composite films subjected to gamma irradiation at doses of Ф<sub>γ</sub> = 100, 200, and 300 kGy at room temperature. The absorption coefficient (αhν) was determined, and the dependencies of (αhν)<sup>2</sup> and (αhν)<sup>1/2</sup> on the incident photon energy (hν) were obtained for the initial and γ-irradiated HDPE and HDPE/GaAs films. The energy of optical forbidden band gap (E<sub>g</sub>) for direct and indirect transitions were evaluated according the Mott -Davis model, and dose-dependent relationship for Eg was constructed. A comparison of these dependencies reveals that all curves exhibit a linear trend. For direct transitions, the curves are nearly parallel, while for indirect transitions, the slopes differ by of ~ 1,5 times. The observed radiation-induced effects in the optical properties of the investigated films are discussed in terms of changes in their electronic structure and the nature of interactions at the polymer–semiconductor interface.</p>

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Optıcal propertıes of gamma ırradıated hdpe/gaas composıte fılms

  • 期刊论文

  • 发表日期：

    2026年4月29日

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  • N. N. Gadzhieva,
  • N. A. Aliyeva,
  • R. A. Mammadov,
  • G. B. Akhmedova,
  • R. M. Mamishova

摘要

This paper presents the results of a UV–Vis spectroscopic study on the optical properties of HDPE polymer films and HDPE/GaAs composite films subjected to gamma irradiation at doses of Фγ = 100, 200, and 300 kGy at room temperature. The absorption coefficient (αhν) was determined, and the dependencies of (αhν)2 and (αhν)1/2 on the incident photon energy (hν) were obtained for the initial and γ-irradiated HDPE and HDPE/GaAs films. The energy of optical forbidden band gap (Eg) for direct and indirect transitions were evaluated according the Mott -Davis model, and dose-dependent relationship for Eg was constructed. A comparison of these dependencies reveals that all curves exhibit a linear trend. For direct transitions, the curves are nearly parallel, while for indirect transitions, the slopes differ by of ~ 1,5 times. The observed radiation-induced effects in the optical properties of the investigated films are discussed in terms of changes in their electronic structure and the nature of interactions at the polymer–semiconductor interface.