Scholarlink

<p>Transparent Ag–ZnO thin films containing 0.05 and 0.24 at% Ag were fabricated by electron-beam evaporation and annealed at 350&#xa0;°C to investigate the influence of Ag concentration and surface modification on optical and electrical behavior under UV irradiation. Increasing the Ag content increased the film resistance by two orders of magnitude and reduced optical transparency from 60 - 70% to 35–50% in the visible region, while the optical band gap remained nearly unchanged (3.28–3.24&#xa0;eV). UV exposure led to a slight increase in reflectance (20–30%) in the MIR region. Spectroscopic analysis indicates that UV irradiation removes residual surface species (C = O and O–H), thereby enhancing charge transport. A pronounced decrease in electrical resistance, with an approximately 14-fold reduction occurring within ~ 120&#xa0;min for the 0.05 at% Ag film and ~ 20&#xa0;min for the 0.24 at% Ag film was observed. Distinct recovery behaviors were observed after UV was switched off: the low-Ag film recovered only ~ 35% of its initial resistance, whereas the 0.24 at% film fully recovered. Depositing a 200&#xa0;nm MgF₂ overlayer enabled full resistance recovery in the 0.05 at% film and reduced the decay time constant from 25 to 3.8&#xa0;min. For the 0.24 at% Ag–ZnO film, the fast and slow decay time constants were 0.8 and 8.12&#xa0;min, respectively, while in the MgF₂/0.24 at% Ag–ZnO structure both converged to ~ 0.8&#xa0;min. These results indicate that the UV-induced resistance changes in Ag–ZnO films are primarily governed by surface processes that modulate charge transport.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

UV-induced changes in the electrical and optical characteristics of Ag-Doped ZnO films

  • 期刊论文

  • 发表日期：

    2026年4月9日

查看全文
  • Y. Kafadaryan,
  • N. Aghamalyan,
  • M. Nersisyan,
  • A. Arakelyan,
  • S. Petrosyan,
  • G. Badalyan,
  • I. Ghambaryan,
  • R. Hovsepyan

摘要

Transparent Ag–ZnO thin films containing 0.05 and 0.24 at% Ag were fabricated by electron-beam evaporation and annealed at 350 °C to investigate the influence of Ag concentration and surface modification on optical and electrical behavior under UV irradiation. Increasing the Ag content increased the film resistance by two orders of magnitude and reduced optical transparency from 60 - 70% to 35–50% in the visible region, while the optical band gap remained nearly unchanged (3.28–3.24 eV). UV exposure led to a slight increase in reflectance (20–30%) in the MIR region. Spectroscopic analysis indicates that UV irradiation removes residual surface species (C = O and O–H), thereby enhancing charge transport. A pronounced decrease in electrical resistance, with an approximately 14-fold reduction occurring within ~ 120 min for the 0.05 at% Ag film and ~ 20 min for the 0.24 at% Ag film was observed. Distinct recovery behaviors were observed after UV was switched off: the low-Ag film recovered only ~ 35% of its initial resistance, whereas the 0.24 at% film fully recovered. Depositing a 200 nm MgF₂ overlayer enabled full resistance recovery in the 0.05 at% film and reduced the decay time constant from 25 to 3.8 min. For the 0.24 at% Ag–ZnO film, the fast and slow decay time constants were 0.8 and 8.12 min, respectively, while in the MgF₂/0.24 at% Ag–ZnO structure both converged to ~ 0.8 min. These results indicate that the UV-induced resistance changes in Ag–ZnO films are primarily governed by surface processes that modulate charge transport.