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<p>Gas flow sensors are widely used in medical diagnostic fields, among which microelectromechanical systems (MEMS) hot-film gas flow sensors are favored in the market due to their advantages of small size, high integration, and mass production. However, in practical applications, the stability and sensitivity of sensors are easily constrained by their chip fabrication processes, leading to performance degradation. This study proposes the use of an annealing process, focusing specifically on the sensor chip itself, to optimize its performance by adjusting annealing parameters (time and temperature). The annealing process significantly improved the microstructure and electrical properties of platinum films on chips. Specifically, when the annealing time is 2&#xa0;h and the temperature is 800°C, the temperature coefficient of resistance (TCR) reaches as high as 3687.02 ppm/°C, with the coefficient of determination (<i>R</i>²) of the sensor’s resistance-temperature curve reaching 0.99925. Compared with as-deposited sensors, annealed sensors exhibit better stability. In dynamic response testing with gas introduction, the sensor undergoes annealing treatment achieves a maximum normalized sensitivity of 0.217/(m/s) with a response time of 36.78 ms. These results indicate that the annealing process can effectively mitigate performance degradation caused by the chip manufacturing process.</p>

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Performance optimization of MEMS silicon substrate hot film gas flow sensors via platinum film annealing

  • 期刊论文

  • 发表日期：

    2026年3月30日

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  • Lei Zhao,
  • Changkun Zhu,
  • Xiaoli Wang,
  • Xiaoqing Jiang,
  • Chu Cheng,
  • Jie Zou,
  • Jiawen Jian

摘要

Gas flow sensors are widely used in medical diagnostic fields, among which microelectromechanical systems (MEMS) hot-film gas flow sensors are favored in the market due to their advantages of small size, high integration, and mass production. However, in practical applications, the stability and sensitivity of sensors are easily constrained by their chip fabrication processes, leading to performance degradation. This study proposes the use of an annealing process, focusing specifically on the sensor chip itself, to optimize its performance by adjusting annealing parameters (time and temperature). The annealing process significantly improved the microstructure and electrical properties of platinum films on chips. Specifically, when the annealing time is 2 h and the temperature is 800°C, the temperature coefficient of resistance (TCR) reaches as high as 3687.02 ppm/°C, with the coefficient of determination (R²) of the sensor’s resistance-temperature curve reaching 0.99925. Compared with as-deposited sensors, annealed sensors exhibit better stability. In dynamic response testing with gas introduction, the sensor undergoes annealing treatment achieves a maximum normalized sensitivity of 0.217/(m/s) with a response time of 36.78 ms. These results indicate that the annealing process can effectively mitigate performance degradation caused by the chip manufacturing process.