Scholarlink

<p>Cu(In, Ga)Se<sub>2</sub> based thin-film solar cells with high efficiency have been using Ga grading as a preferred technique to improve efficiency. Bi-layer or single grading is a method of stacking two absorbers with two different band gaps in order to optimize the absorption layer with Ga grading. During the annealing process (&gt; 500&#xa0;°C) of CIGS absorber, the Ga has a tendency of moving and settling towards the back contact. It disturbs the Ga grading intended during the deposition process. To restrict the Ga inter-layer diffusion a thin MoS<sub>2</sub> interfacial layer has been deposited between two Ga graded absorber layers. It was found that the insertion of a thin MoS<sub>2</sub> layer between two absorber layers restricts the Ga diffusion as could be confirmed from SIMS profile. Bi-layer of CIGS absorber thin-films with different Ga fraction were deposited on Mo/SLG substrate. Two sets of samples with bilayer structures (i) Glass/Mo/CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2</sub>(2)/MoS<sub>2</sub>/CuIn<sub>0.34</sub>Ga<sub>0.66</sub>Se<sub>2</sub>(1) and (ii) Glass/Mo/CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2</sub> (2)/CuIn<sub>0.34</sub>Ga<sub>0.66</sub>Se<sub>2</sub>(1) were prepared by using the DC/RF sputtering. After deposition two-step annealing process in the Se atmosphere was conducted, at temperatures exceeding 500&#xa0;°C. The presence of the MoS<sub>₂</sub> phase was confirmed through XRD analysis. It was also observed that the optimum selenization temperature has a significant impact on the phase formation, surface roughness, and electrical properties of the absorber layers. As the annealing temperature increased, the binary phases in the film disappeared. In addition, we have also studied the influence of selenization temperature on the structural, compositional and electrical characteristics of both single-layer and bilayer CIGS films. The initial device result obtained by fabricating the device suggest the improvement in device performance with the intermediate MoS<sub>2</sub> layer. To validate the experimentally obtained parameters simulations have been performed by employing SCAPS-1D software. The results extracted from simulations were consistent with the experimentally obtained results.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Advancements in bilayer CIGS solar cells through tailored gallium grading: An integrated experimental and computational approach

  • 期刊论文

  • 发表日期：

    2026年3月23日

查看全文
  • Dipak K. Jena,
  • R. Prasad,
  • Udai P. Singh

摘要

Cu(In, Ga)Se2 based thin-film solar cells with high efficiency have been using Ga grading as a preferred technique to improve efficiency. Bi-layer or single grading is a method of stacking two absorbers with two different band gaps in order to optimize the absorption layer with Ga grading. During the annealing process (> 500 °C) of CIGS absorber, the Ga has a tendency of moving and settling towards the back contact. It disturbs the Ga grading intended during the deposition process. To restrict the Ga inter-layer diffusion a thin MoS2 interfacial layer has been deposited between two Ga graded absorber layers. It was found that the insertion of a thin MoS2 layer between two absorber layers restricts the Ga diffusion as could be confirmed from SIMS profile. Bi-layer of CIGS absorber thin-films with different Ga fraction were deposited on Mo/SLG substrate. Two sets of samples with bilayer structures (i) Glass/Mo/CuIn0.7Ga0.3Se2(2)/MoS2/CuIn0.34Ga0.66Se2(1) and (ii) Glass/Mo/CuIn0.7Ga0.3Se2 (2)/CuIn0.34Ga0.66Se2(1) were prepared by using the DC/RF sputtering. After deposition two-step annealing process in the Se atmosphere was conducted, at temperatures exceeding 500 °C. The presence of the MoS₂ phase was confirmed through XRD analysis. It was also observed that the optimum selenization temperature has a significant impact on the phase formation, surface roughness, and electrical properties of the absorber layers. As the annealing temperature increased, the binary phases in the film disappeared. In addition, we have also studied the influence of selenization temperature on the structural, compositional and electrical characteristics of both single-layer and bilayer CIGS films. The initial device result obtained by fabricating the device suggest the improvement in device performance with the intermediate MoS2 layer. To validate the experimentally obtained parameters simulations have been performed by employing SCAPS-1D software. The results extracted from simulations were consistent with the experimentally obtained results.