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<p>In this study, pure ZnO and TiO<sub>2</sub> doped ZnO thin films were deposited on glass substrates using the sol–gel dip-coating technique. The thickness of the deposited films was approximately 200&#xa0;nm. The films were annealed in air at a temperature of 550&#xa0;°C for 2&#xa0;h. Structural properties were investigated under different preparation conditions, including TiO₂ doping concentrations of 0, 2, and 4%. The films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), and optical absorption spectroscopy. The results indicated that the particle size of the prepared samples decreased with increasing TiO<sub>2</sub> doping concentration. Several structural properties were found to vary as a result of TiO<sub>2</sub> incorporation as a dopant. XRD analysis revealed that the films exhibited a preferred orientation along the (101) crystallographic direction. AFM surface morphology analysis confirmed a reduction in particle size with increasing TiO<sub>2</sub> content. Optical measurements demonstrated that TiO₂ doping led to a decrease in the optical band gap energy from 3.88 to 3.65&#xa0;eV, accompanied by changes in optical transmittance. Furthermore, the gas-sensing performance of the films was evaluated for CO₂ gas at a concentration of 3 ppm at room temperature by measuring their sensitivity over different exposure times. The results showed that the films exhibited a high sensitivity to CO<sub>2</sub> gas, with the highest sensitivity observed for the sample doped with 4% TiO₂.</p>

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Preparation of gaseous sensor of nano zno: TiO2 thin films to detect CO2 gas

  • 期刊论文

  • 发表日期：

    2026年2月25日

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  • Amel H. Daood,
  • Amel S. Saber,
  • Sarah H. Ali,
  • Mahdi M. Mutter

摘要

In this study, pure ZnO and TiO2 doped ZnO thin films were deposited on glass substrates using the sol–gel dip-coating technique. The thickness of the deposited films was approximately 200 nm. The films were annealed in air at a temperature of 550 °C for 2 h. Structural properties were investigated under different preparation conditions, including TiO₂ doping concentrations of 0, 2, and 4%. The films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), and optical absorption spectroscopy. The results indicated that the particle size of the prepared samples decreased with increasing TiO2 doping concentration. Several structural properties were found to vary as a result of TiO2 incorporation as a dopant. XRD analysis revealed that the films exhibited a preferred orientation along the (101) crystallographic direction. AFM surface morphology analysis confirmed a reduction in particle size with increasing TiO2 content. Optical measurements demonstrated that TiO₂ doping led to a decrease in the optical band gap energy from 3.88 to 3.65 eV, accompanied by changes in optical transmittance. Furthermore, the gas-sensing performance of the films was evaluated for CO₂ gas at a concentration of 3 ppm at room temperature by measuring their sensitivity over different exposure times. The results showed that the films exhibited a high sensitivity to CO2 gas, with the highest sensitivity observed for the sample doped with 4% TiO₂.