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<p>In the present report structure and morphology dependent optical characteristics of the pure and zinc oxide doped tungsten oxide films are presented. Thin films having crystallites in the nanometer regime are deposited using RF-Magnetron sputtering. Morphology of the films are analysed using Atomic Force Microscopy images. Root Mean Square surface roughness values of the heavily ZnO doped films exhibits higher values relative to other films. The optical band gap and the transmittance of the samples are studied using UV-Visible spectroscopic measurement. Compared to undoped film the optical band gap energy presents a red shift as a result of oxygen deficiency due to ZnO doping. Photoluminescence measurements reveals that the doping induced oxygen deficiency related emission peaks are present in the doped films other than the band edge emission which is the only emission in the undoped one. Using spectroscopic ellipsometric analysis the optical constants of the films are analysed in detail in view of practical application.</p>

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Structure and morphology dependent optical behaviour of ZnO doped WO3 thin films

  • 期刊论文

  • 发表日期：

    2026年3月11日

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  • V. S. Kavitha,
  • S. R. Chalana,
  • P. R. Biju,
  • V. P. Mahadevan Pillai

摘要

In the present report structure and morphology dependent optical characteristics of the pure and zinc oxide doped tungsten oxide films are presented. Thin films having crystallites in the nanometer regime are deposited using RF-Magnetron sputtering. Morphology of the films are analysed using Atomic Force Microscopy images. Root Mean Square surface roughness values of the heavily ZnO doped films exhibits higher values relative to other films. The optical band gap and the transmittance of the samples are studied using UV-Visible spectroscopic measurement. Compared to undoped film the optical band gap energy presents a red shift as a result of oxygen deficiency due to ZnO doping. Photoluminescence measurements reveals that the doping induced oxygen deficiency related emission peaks are present in the doped films other than the band edge emission which is the only emission in the undoped one. Using spectroscopic ellipsometric analysis the optical constants of the films are analysed in detail in view of practical application.