Scholarlink

<p>Cadmium oxide (CdO) thin films were synthesized on glass substrates at 500&#xa0;°C using the cost-effective chemical spray pyrolysis technique. Structural, optical, and defect-related properties were systematically investigated of the prepared samples. It is found that the films exhibited an average thickness of 320&#xa0;nm. A cubic polycrystalline structure with a preferred (111) orientation, and an average crystallite size of 18.75&#xa0;nm were confirmed by XRD, SEM, and AFM analyses which revealed uniformly spherical distribution to semi-spherical nanoparticles shapes with nanoscale roughness, indicating high surface activity. UV–Vis spectroscopy showed strong absorption in the UV region and high transparency in the visible–NIR range, with a direct optical band gap of 2.38&#xa0;eV determined via Tauc analysis. Moreover, FTIR confirmed Cd–O bond formation along with surface hydroxyl groups, while photoluminescence spectra exhibited visible and near-infrared emissions linked to oxygen vacancies and cadmium interstitials. Chromaticity analysis (CIE 1931 and 1976) indicated near-white light emission with a slight bluish–green tint. With UVC irradiation, films demonstrated a low absorbance and a gradual narrowing in the optical band gap, attributed to the defect passivation and improved structural ordering. Furthermore, a p–n heterojunction photodetector fabricated by integrating CdO with porous silicon exhibited excellent optoelectronic performance. A peak responsivity of 0.5&#xa0;A/W at 757&#xa0;nm, a detectivity of 8 × 10¹² Jones, and a maximum quantum efficiency of 83.67% were achieved. These findings highlight CdO thin films as promising candidates for next-generation photodetectors, solar cells, and optical sensing applications. By adjusting the properties of CdO via UVC irradiation high a p-n heterojunction photodetector (n-CdO/p-porous silicon) has been demonstrated.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

UVC-tuned cadmium oxide thin films via spray pyrolysis: structural evolution and photodetector efficiency

  • 期刊论文

  • 发表日期：

    2026年2月16日

查看全文
  • Mushtaq Abed Al-Jubbori,
  • Mohammed S. Sinjar,
  • Hisham Anwer Salih,
  • Asmaa Zaki Khalil,
  • Faiz Ahmad Mohammed,
  • Abedelmoneim Saleh

摘要

Cadmium oxide (CdO) thin films were synthesized on glass substrates at 500 °C using the cost-effective chemical spray pyrolysis technique. Structural, optical, and defect-related properties were systematically investigated of the prepared samples. It is found that the films exhibited an average thickness of 320 nm. A cubic polycrystalline structure with a preferred (111) orientation, and an average crystallite size of 18.75 nm were confirmed by XRD, SEM, and AFM analyses which revealed uniformly spherical distribution to semi-spherical nanoparticles shapes with nanoscale roughness, indicating high surface activity. UV–Vis spectroscopy showed strong absorption in the UV region and high transparency in the visible–NIR range, with a direct optical band gap of 2.38 eV determined via Tauc analysis. Moreover, FTIR confirmed Cd–O bond formation along with surface hydroxyl groups, while photoluminescence spectra exhibited visible and near-infrared emissions linked to oxygen vacancies and cadmium interstitials. Chromaticity analysis (CIE 1931 and 1976) indicated near-white light emission with a slight bluish–green tint. With UVC irradiation, films demonstrated a low absorbance and a gradual narrowing in the optical band gap, attributed to the defect passivation and improved structural ordering. Furthermore, a p–n heterojunction photodetector fabricated by integrating CdO with porous silicon exhibited excellent optoelectronic performance. A peak responsivity of 0.5 A/W at 757 nm, a detectivity of 8 × 10¹² Jones, and a maximum quantum efficiency of 83.67% were achieved. These findings highlight CdO thin films as promising candidates for next-generation photodetectors, solar cells, and optical sensing applications. By adjusting the properties of CdO via UVC irradiation high a p-n heterojunction photodetector (n-CdO/p-porous silicon) has been demonstrated.