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<p>This study develops a photodetector for ultraviolet (UV) radiation in the solar-blind region, specifically by designing a β-Ga<sub>2</sub>O<sub>3</sub>-based ultraviolet phototransistor. The device comprises a β-Ga<sub>2</sub>O<sub>3</sub> epitaxial layer deposited on a sapphire substrate via metal organic chemical vapor deposition (MOCVD), with a high-k Al<sub>2</sub>O<sub>3</sub> gate dielectric layer. The device’s spectral response measurement indicates a cutoff wavelength of 255&#xa0;nm, which was selected for evaluating its optical performance. At -6&#xa0;V, the photocurrent under 255&#xa0;nm illumination is approximately 10 nA and the dark current is about 0.1 pA, yielding a photo-to-dark curent ratio (PDCR) exceeding 10⁵. Furthermore, a simple ultraviolet optical communication demonstration system was constructed, successfully encoding and decoding the international Morse code “JNU” into optical pulses, verifying the detector’s feasibility for real-time optical communication. In conclusion, the β-Ga<sub>2</sub>O<sub>3</sub>-based ultraviolet phototransistor offers high gain, low noise, and easy integration, making it a promising candidate for next-generation, low-cost, miniaturized solar-blind UV photodetectors and communication modules.</p>

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β-Ga2O3 phototransistors for solar-blind detection and optical communications

  • 期刊论文

  • 发表日期：

    2026年2月13日

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  • Shuyao Han,
  • Anqi Qiang,
  • Xuekun Kong,
  • Irina N. Parkhomenko,
  • Fadei F. Komarov,
  • Guofeng F. Yang,
  • Jun-Ge G. Liang,
  • Xinyi Shan,
  • Jian Guo

摘要

This study develops a photodetector for ultraviolet (UV) radiation in the solar-blind region, specifically by designing a β-Ga2O3-based ultraviolet phototransistor. The device comprises a β-Ga2O3 epitaxial layer deposited on a sapphire substrate via metal organic chemical vapor deposition (MOCVD), with a high-k Al2O3 gate dielectric layer. The device’s spectral response measurement indicates a cutoff wavelength of 255 nm, which was selected for evaluating its optical performance. At -6 V, the photocurrent under 255 nm illumination is approximately 10 nA and the dark current is about 0.1 pA, yielding a photo-to-dark curent ratio (PDCR) exceeding 10⁵. Furthermore, a simple ultraviolet optical communication demonstration system was constructed, successfully encoding and decoding the international Morse code “JNU” into optical pulses, verifying the detector’s feasibility for real-time optical communication. In conclusion, the β-Ga2O3-based ultraviolet phototransistor offers high gain, low noise, and easy integration, making it a promising candidate for next-generation, low-cost, miniaturized solar-blind UV photodetectors and communication modules.