Scholarlink

<p>Nickel (Ni) modified Zinc Oxide (ZnO) nanomaterials were synthesized using sol–gel technique. The structural and morphological studies of Ni modified ZnO nanomaterials are investigated using XRD and SEM. The materials exhibit a hexagonal wurtzite structure with particle sizes in nanometer range. Optical studies, including absorption and transmission spectra, revealed an increase in band gap by increasing Ni doping in ZnO from 3.26 to 3.35&#xa0;eV. Current–voltage characteristics show a decrease in carrier mobility and conductivity when increasing Ni content in ZnO. These Ni-doped ZnO thin films were investigated as electron transport layers (ETLs) in MAPbI<sub>3</sub>-based perovskite photodiodes. Under illumination at 465&#xa0;nm with ~ 4 mW/cm² power, the maximum responsivity and detectivity for devices incorporating Zn<sub>1-x</sub>Ni<sub>x</sub>O (x = 0.05, 0.10, 0.15) were 1.49&#xa0;A/W, 1.04&#xa0;A/W, 16.64&#xa0;mA/W, and 5.39 × 10<sup>11</sup>, 3.80 × 10<sup>11</sup>, and 3.51 × 10<sup>9</sup> Jones, respectively. The low concentration Ni-doped ZnO nanomaterials emerges as potential materials for the application of perovskite MAPbI<sub>3</sub> photosensors.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Structural, morphological and optical engineering of ZnO through nickel doping for perovskite photosensor application

  • 期刊论文

  • 发表日期：

    2026年2月12日

查看全文
  • Ankur Rana,
  • Megha Rana,
  • Riya Malik,
  • Suraj P. Khanna,
  • R. Srivastava,
  • C. K. Suman

摘要

Nickel (Ni) modified Zinc Oxide (ZnO) nanomaterials were synthesized using sol–gel technique. The structural and morphological studies of Ni modified ZnO nanomaterials are investigated using XRD and SEM. The materials exhibit a hexagonal wurtzite structure with particle sizes in nanometer range. Optical studies, including absorption and transmission spectra, revealed an increase in band gap by increasing Ni doping in ZnO from 3.26 to 3.35 eV. Current–voltage characteristics show a decrease in carrier mobility and conductivity when increasing Ni content in ZnO. These Ni-doped ZnO thin films were investigated as electron transport layers (ETLs) in MAPbI3-based perovskite photodiodes. Under illumination at 465 nm with ~ 4 mW/cm² power, the maximum responsivity and detectivity for devices incorporating Zn1-xNixO (x = 0.05, 0.10, 0.15) were 1.49 A/W, 1.04 A/W, 16.64 mA/W, and 5.39 × 1011, 3.80 × 1011, and 3.51 × 109 Jones, respectively. The low concentration Ni-doped ZnO nanomaterials emerges as potential materials for the application of perovskite MAPbI3 photosensors.