Scholarlink

<p>In the present work, a new type of self-powered photoelectrochemical (PEC) solar-blind ultraviolet (UV) photodetector has been constructed using alpha-gallium oxide/tantalum (α-Ga<sub>2</sub>O<sub>3</sub>/Ta) as photoanode. The photoelectric properties of the device have been investigated systematically. Under zero-bias conditions with 254&#xa0;nm UV light illumination, the α-Ga<sub>2</sub>O<sub>3</sub>/Ta PEC photodetector achieves a responsivity of 6.6&#xa0;mA/W, an external quantum efficiency of 3.22%, a high light/dark current ratio of 546.5, a rise/decay time of 0.37&#xa0;s/0.07&#xa0;s, and a specific detectivity of 1.46 × 10<sup>12</sup> Jones, exhibiting typical solar-blind UV response characteristics and stable self-powered ability. The outstanding performance of the α-Ga<sub>2</sub>O<sub>3</sub>/Ta PEC photodetector is mainly attributed to the built-in electric field resulted from the solid-liquid interface, which can effectively separate photogenerated electron-hole pairs and promote the self-driven ability of the device. More importantly, the adoption of thermally stable Ta substrate significantly enhances the crystalline quality of α-Ga<sub>2</sub>O<sub>3</sub>, concurrently reducing dark current and carrier recombination rates. These improvements collectively boost the responsivity, response speed, and long-term operational stability of the α-Ga<sub>2</sub>O<sub>3</sub>/Ta PEC photodetector, making it potentially suitable for harsh-environment applications including high-temperature and acidic conditions.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Construction of α-Ga2O3/Ta photoanode for self-powered photoelectrochemical solar-blind ultraviolet photodetector

  • 期刊论文

  • 发表日期：

    2026年2月9日

查看全文
  • Yurong Liu,
  • Qingyu Gao,
  • Xikai Wang,
  • Chunjie Gao

摘要

In the present work, a new type of self-powered photoelectrochemical (PEC) solar-blind ultraviolet (UV) photodetector has been constructed using alpha-gallium oxide/tantalum (α-Ga2O3/Ta) as photoanode. The photoelectric properties of the device have been investigated systematically. Under zero-bias conditions with 254 nm UV light illumination, the α-Ga2O3/Ta PEC photodetector achieves a responsivity of 6.6 mA/W, an external quantum efficiency of 3.22%, a high light/dark current ratio of 546.5, a rise/decay time of 0.37 s/0.07 s, and a specific detectivity of 1.46 × 1012 Jones, exhibiting typical solar-blind UV response characteristics and stable self-powered ability. The outstanding performance of the α-Ga2O3/Ta PEC photodetector is mainly attributed to the built-in electric field resulted from the solid-liquid interface, which can effectively separate photogenerated electron-hole pairs and promote the self-driven ability of the device. More importantly, the adoption of thermally stable Ta substrate significantly enhances the crystalline quality of α-Ga2O3, concurrently reducing dark current and carrier recombination rates. These improvements collectively boost the responsivity, response speed, and long-term operational stability of the α-Ga2O3/Ta PEC photodetector, making it potentially suitable for harsh-environment applications including high-temperature and acidic conditions.