Investigating the influence of erbium doping on structural, morphological, compositional and magnetic properties of Zn0.6Mg0.4ErxFe(2-x)O4 ferrites
摘要
Ferrites, a class of materials known for their exceptional electrical, magnetic, and mechanical properties, have found diverse applications, ranging from high-density data storage to biomedical technologies. Among these, magnesium ferrites have been employed as catalysts and humidity sensors, while super paramagnetic ferrites are promising candidates for cancer treatment through hyperthermia therapy. In this context, we present a study on a series of Er3+ substituted Zn0.6Mg0.4ErxFe2−xO4 (x = 0.0, 0.05, 0.10, and 0.15) ferrites, with a focus on their structural, morphological, compositional and magnetic characteristics. The synthesis of these ferrites was carried out by using co-precipitation method, and their structural properties were analyzed through X-Ray Diffractometer (XRD) analysis. The results confirmed the presence of both cubic and tetragonal spinal structures, with variations in lattice constants and crystallite sizes attributed to Er3+ substitution. Scanning electron microscope (SEM) analysis provided insights into the morphological information about the nanoparticles, revealing spherical grains with some degree of agglomeration. Fourier transform infrared spectroscopy (FT-IR) analysis further corroborated the presence of essential metal-oxygen bonds in the samples at different wave numbers. The Vibrating sample magnetometer (VSM) analysis demonstrated that maximum saturation magnetization of 48.44 emu/g is observed for x = 0.15 content of Er in synthesized ferrites. This research sheds light on the structural, morphological, compositional and magnetic properties of Er-doped Zn0.6Mg0.4ErxFe2−xO4 ferrites, underscoring the significance of fine-tuning composition to tailor specific properties. The findings contribute to the understanding of Zn0.6Mg0.4ErxFe2−xO4 nonmaterial and their applications in fields such as catalysis, sensors, memory storage, switching devices etc.