<p>This work provides a detailed theoretical analysis of the optical properties of nanostructures, focusing on the influence of disk size, temperature and hydrostatic pressure. Correlated and uncorrelated excitons are examined in the framework of the effective mass approximation using a variational method. The analysis covers quantum disks with radii in the range <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(R=3\)</EquationSource> </InlineEquation>–<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(10~\textrm{nm}\)</EquationSource> </InlineEquation>, hydrostatic pressures between 0 and <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(40~\textrm{kbar}\)</EquationSource> </InlineEquation>, and temperatures from 4 to <InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(300~\textrm{K}\)</EquationSource> </InlineEquation>, allowing a comprehensive exploration of excitonic and optical responses under realistic experimental conditions. The study focuses on key optical properties, including emission wavelength, interband absorption coefficient and photoionization cross section. Numerical results indicate that reducing the disk size improves quantum confinement, leading to significant changes in emission and absorption spectra. Variations in temperature and hydrostatic pressure have a significant impact on optical responses, leading to changes in emission wavelength and absorption intensity. Analysis of electron-hole correlations reveals clear distinctions between bound and unbound excitonic transitions, with correlated excitons exhibiting higher binding energies and more pronounced spectral features. These results provide important information for the design and optimization of quantum disk-based optoelectronic devices, such as tunable LEDs, photodetectors and nanoscale photonic components. To the best of our knowledge, this is the first work to simultaneously examine the combined influence of excitonic correlation, hydrostatic pressure, temperature, and disk size on emission wavelength, interband absorption coefficient and photoionization cross section of GaAs/AlAs quantum disks</p>

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Theoretical study of optoelectronic properties of GaAs/AlAs quantum disks: role of correlated and uncorrelated excitons under pressure and temperature

  • M. Hbibi,
  • S. Chouef,
  • R. Boussetta,
  • O. Mommadi,
  • A. El Moussaouy,
  • C. A. Duque

摘要

This work provides a detailed theoretical analysis of the optical properties of nanostructures, focusing on the influence of disk size, temperature and hydrostatic pressure. Correlated and uncorrelated excitons are examined in the framework of the effective mass approximation using a variational method. The analysis covers quantum disks with radii in the range \(R=3\) \(10~\textrm{nm}\) , hydrostatic pressures between 0 and \(40~\textrm{kbar}\) , and temperatures from 4 to \(300~\textrm{K}\) , allowing a comprehensive exploration of excitonic and optical responses under realistic experimental conditions. The study focuses on key optical properties, including emission wavelength, interband absorption coefficient and photoionization cross section. Numerical results indicate that reducing the disk size improves quantum confinement, leading to significant changes in emission and absorption spectra. Variations in temperature and hydrostatic pressure have a significant impact on optical responses, leading to changes in emission wavelength and absorption intensity. Analysis of electron-hole correlations reveals clear distinctions between bound and unbound excitonic transitions, with correlated excitons exhibiting higher binding energies and more pronounced spectral features. These results provide important information for the design and optimization of quantum disk-based optoelectronic devices, such as tunable LEDs, photodetectors and nanoscale photonic components. To the best of our knowledge, this is the first work to simultaneously examine the combined influence of excitonic correlation, hydrostatic pressure, temperature, and disk size on emission wavelength, interband absorption coefficient and photoionization cross section of GaAs/AlAs quantum disks