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<p>This work studies the interplay between nanostructural anisotropy, dielectric confinement, and polarization memory in porous silicon films with embedded carbon dots (CDs). Using polarization-resolved photoluminescence spectroscopy and theoretical modeling based on the Lavallard-Suris dielectric confinement model, which is extended to spatially ordered ellipsoidal nanostructures, we demonstrate that the polarization degree of the photoluminescence emission of CDs is determined by the geometric morphology and dielectric contrast of the host matrix. Elongated nanostructures within porous silicon enhance the polarization memory, while the porous matrix spatially confines the CDs, aligning their emission dipoles and reducing depolarization by restricting rotational freedom. Controlled oxidation of the porous silicon films is found to eliminate structural anisotropy, diminishing the polarization memory despite improved CDs integration. Experimental results confirm that both in-plane anisotropic porous silicon films and oxidized ones with incorporated CDs retain matrix anisotropy and align well with the ordered model. Angular shifts in the photoluminescence polarization correlate with preferential crystalline axis orientation in the porous silicon matrix. These findings enable the rational design of polarization-sensitive optoelectronic devices, such as optical sensors and switches, by leveraging the tunable nanostructure and dielectric properties of hybrid porous silicon-CDs systems.</p>

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Polarization memory of photoluminescence in anisotropic nanocomposite films based on porous silicon and carbon dots

  • 期刊论文

  • 发表日期：

    2026年1月23日

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  • Yingying Deng,
  • Anastasiya Masasina,
  • Nikita Mitiushev,
  • Anton Ikonnikov,
  • Denis Presnov,
  • Valery Yakunin,
  • Anatoliy Firsov,
  • Andrey Baranov,
  • Viktor Timoshenko

摘要

This work studies the interplay between nanostructural anisotropy, dielectric confinement, and polarization memory in porous silicon films with embedded carbon dots (CDs). Using polarization-resolved photoluminescence spectroscopy and theoretical modeling based on the Lavallard-Suris dielectric confinement model, which is extended to spatially ordered ellipsoidal nanostructures, we demonstrate that the polarization degree of the photoluminescence emission of CDs is determined by the geometric morphology and dielectric contrast of the host matrix. Elongated nanostructures within porous silicon enhance the polarization memory, while the porous matrix spatially confines the CDs, aligning their emission dipoles and reducing depolarization by restricting rotational freedom. Controlled oxidation of the porous silicon films is found to eliminate structural anisotropy, diminishing the polarization memory despite improved CDs integration. Experimental results confirm that both in-plane anisotropic porous silicon films and oxidized ones with incorporated CDs retain matrix anisotropy and align well with the ordered model. Angular shifts in the photoluminescence polarization correlate with preferential crystalline axis orientation in the porous silicon matrix. These findings enable the rational design of polarization-sensitive optoelectronic devices, such as optical sensors and switches, by leveraging the tunable nanostructure and dielectric properties of hybrid porous silicon-CDs systems.