<p>Thick, preferentially oriented, and highly conductive LaNiO₃ thin films were successfully grown on silicon wafers through a low-cost chemical solution deposition process. The use of monoethanolamine (MEA) to modify the precursors is crucial for controlling the film thickness, orientation, and electronic properties. When the molar ratio of MEA to LaNiO₃ is 1, the film achieves over 98% c-axis preferred orientation and increased thickness under the same deposition conditions. For ratios greater than zero but less than 0.5, the derived films are randomly oriented, even after rapid thermal annealing. Although all LaNiO₃ films display similar electronic transition characteristics, those deposited with MEA show a lower resistivity of about 0.7 mΩ·cm, compared to 1.41 mΩ·cm for films without MEA at room temperature. The conductivity first increases and then decreases as MEA content rises, due to the combined effects of reduced grain boundaries and altered orientation. BiFeO₃ was also fabricated on the 180&#xa0;µl-MEA modified-LaNiO₃ electrode, exhibiting a similar (00<i>l</i>) preferred orientation and strong ferroelectric properties. Additionally, optimizing the MEA dosage will aid in developing thick and well-oriented LNO electrodes for silicon-compatible functional devices with the sol-gel.</p>