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<p>Synthesis and detailed characterization of Zn<sub>0.98−x</sub>Si<sub>0.02</sub>Ti<sub>x</sub>O nanocomposites, where titanium content varies from 0.0 to 0.20, were presented. It is employed a straightforward solid-state reaction is employed to prepare the nanocomposites. X-ray diffraction analysis confirmed that the hexagonal wurtzite structure remains intact while experiencing systematic lattice expansion. The a-parameter increased from 3.25 Å to 3.28 Å, and the c-parameter grew from 5.21 Å to 5.24 Å with Ti-incorporation. Crystallite dimensions decreased from 28.3&#xa0;nm in pure samples to 26.01&#xa0;nm in heavily doped variants, while dislocation density rose from 1.05 × 10¹⁴ to 11.9 × 10¹⁴ lines/m² by using the Williamson-Hall formula. Scanning electron microscopy showed grain size changes from 300 to 400&#xa0;nm to a broader 200–400&#xa0;nm distribution. Temperature-dependent electrical measurements revealed activation energies between 0.089 and 0.129&#xa0;eV. Optical properties demonstrated band gap widening from 3.21&#xa0;eV to 3.26&#xa0;eV, consistent with the Burstein-Moss phenomenon. These findings highlight the potential of controlled titanium doping for developing advanced optoelectronic devices.</p>

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Facile synthesis and characterization for Ti-doped Zn0.98-xSi0.02TixO nanocomposites: Enhanced conductivity and tunable band gap for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2025年12月11日

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  • E. E. Elgarhy,
  • Soraya Abdelhaleem,
  • H. A. Zayed,
  • Nashwa M. Yousif,
  • M. S. Shalaby

摘要

Synthesis and detailed characterization of Zn0.98−xSi0.02TixO nanocomposites, where titanium content varies from 0.0 to 0.20, were presented. It is employed a straightforward solid-state reaction is employed to prepare the nanocomposites. X-ray diffraction analysis confirmed that the hexagonal wurtzite structure remains intact while experiencing systematic lattice expansion. The a-parameter increased from 3.25 Å to 3.28 Å, and the c-parameter grew from 5.21 Å to 5.24 Å with Ti-incorporation. Crystallite dimensions decreased from 28.3 nm in pure samples to 26.01 nm in heavily doped variants, while dislocation density rose from 1.05 × 10¹⁴ to 11.9 × 10¹⁴ lines/m² by using the Williamson-Hall formula. Scanning electron microscopy showed grain size changes from 300 to 400 nm to a broader 200–400 nm distribution. Temperature-dependent electrical measurements revealed activation energies between 0.089 and 0.129 eV. Optical properties demonstrated band gap widening from 3.21 eV to 3.26 eV, consistent with the Burstein-Moss phenomenon. These findings highlight the potential of controlled titanium doping for developing advanced optoelectronic devices.