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<p>Based on the tailorable nature of two-dimensional (2D) materials, we fabricated stepped Fe<sub>3</sub>GeTe<sub>2</sub> (FGT) nanosheets devices with inhomogeneous thickness and investigated their angular magnetoresistance (AMR) behavior. Our measurements reveal a distinct antisymmetric AMR dependence on field orientation (0-360°) under low magnetic fields, exhibiting anomalous peaks at ~ 90° and ~ 270°. We suggest that this anomalous phenomenon may arise from local symmetry breaking induced by thickness inhomogeneity, which modifies the electronic structure of the topological nodal-line semimetal FGT and substantially alters the coupling between its topological band features and magnetic textures. This work offers novel experimental insights into the interaction mechanisms between topological electronic states and magnetic properties.</p>

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Unconventional angular magnetoresistance in magnetic nodal-line semimetal Fe3GeTe2 nanosheets with inhomogeneous thickness

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • Xiaoyun Wang,
  • Chulei Liu,
  • Fan Chen,
  • Chaoyang Kang,
  • Shanshan Liang

摘要

Based on the tailorable nature of two-dimensional (2D) materials, we fabricated stepped Fe3GeTe2 (FGT) nanosheets devices with inhomogeneous thickness and investigated their angular magnetoresistance (AMR) behavior. Our measurements reveal a distinct antisymmetric AMR dependence on field orientation (0-360°) under low magnetic fields, exhibiting anomalous peaks at ~ 90° and ~ 270°. We suggest that this anomalous phenomenon may arise from local symmetry breaking induced by thickness inhomogeneity, which modifies the electronic structure of the topological nodal-line semimetal FGT and substantially alters the coupling between its topological band features and magnetic textures. This work offers novel experimental insights into the interaction mechanisms between topological electronic states and magnetic properties.