<p>To avoid the failure of silicon nitride (Si<sub>3</sub>N<sub>4</sub>) materials caused by cracks or excessive friction, diamond films with Micron/Submicron/Nanometer multilayer structures were successfully prepared on Si<sub>3</sub>N<sub>4</sub> substrate by hot filament chemical vapor deposition (HFCVD). Subsequently, MoS<sub>2</sub> films were deposited on the surface using RF magnetron sputtering technology to construct a multilayer diamond/MoS<sub>2</sub> self-lubricating film structure. The effects of Ar flow rate, sputtering power, and substrate temperature on the growth behavior of composite self-lubricating films were studied. By optimizing the sputtering parameters, the mechanical and friction properties of the films were optimized. Raman spectroscopy (Raman), X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were employed to characterize the structural quality, composition, surface morphology, and surface roughness of the material. At the same time, the tribological properties of the films were evaluated by friction and wear experiments. The experimental results indicate that a 40 sccm Ar flow, 250&#xa0;W sputtering power, and a substrate temperature of 300&#xa0;°C are the optimal combination of process parameters. The multilayer diamond/MoS<sub>2</sub> self-lubricating film prepared under these conditions exhibits high crystallinity, low surface roughness, and good interfacial bonding ability, resulting in a high hardness (21.16&#xa0;MPa), elastic modulus (176.33&#xa0;MPa), low friction coefficient (0.042) and a low wear rate (1.931 ± 0.043 × 10<sup>− 6</sup> mm<sup>3</sup>/N·m). Under a load of 15&#xa0;N, the wear resistance remains stable after friction for 45&#xa0;min, indicating a promising application prospect for wear-resistant, self-lubricating Si<sub>3</sub>N<sub>4</sub> bearings. The performance control of multilayer diamond/MoS<sub>2</sub> self-lubricating film on Si<sub>3</sub>N<sub>4</sub> substrate has important theoretical significance and engineering application value.</p>

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Preparation and properties of multilayer diamond/MoS2 self-lubricating films on Si3N4 substrate

  • Guangyu Yan,
  • Bowen Li,
  • He Wang,
  • Yuhou Wu,
  • Lixiu Zhang,
  • Songhua Li,
  • Tiantian Liu

摘要

To avoid the failure of silicon nitride (Si3N4) materials caused by cracks or excessive friction, diamond films with Micron/Submicron/Nanometer multilayer structures were successfully prepared on Si3N4 substrate by hot filament chemical vapor deposition (HFCVD). Subsequently, MoS2 films were deposited on the surface using RF magnetron sputtering technology to construct a multilayer diamond/MoS2 self-lubricating film structure. The effects of Ar flow rate, sputtering power, and substrate temperature on the growth behavior of composite self-lubricating films were studied. By optimizing the sputtering parameters, the mechanical and friction properties of the films were optimized. Raman spectroscopy (Raman), X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were employed to characterize the structural quality, composition, surface morphology, and surface roughness of the material. At the same time, the tribological properties of the films were evaluated by friction and wear experiments. The experimental results indicate that a 40 sccm Ar flow, 250 W sputtering power, and a substrate temperature of 300 °C are the optimal combination of process parameters. The multilayer diamond/MoS2 self-lubricating film prepared under these conditions exhibits high crystallinity, low surface roughness, and good interfacial bonding ability, resulting in a high hardness (21.16 MPa), elastic modulus (176.33 MPa), low friction coefficient (0.042) and a low wear rate (1.931 ± 0.043 × 10− 6 mm3/N·m). Under a load of 15 N, the wear resistance remains stable after friction for 45 min, indicating a promising application prospect for wear-resistant, self-lubricating Si3N4 bearings. The performance control of multilayer diamond/MoS2 self-lubricating film on Si3N4 substrate has important theoretical significance and engineering application value.