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<p>In this study, the effect of static charge at the interfacial layer of MOS devices is investigated employing Al<sub>2</sub>O<sub>3</sub> dielectric thin film on two different grades of silicon wafers. The presence of the positive static charge caused the inversion capacitance at high frequency and widening of the hysteresis width. Surface passivation methods including the insertion of SiO<sub>2</sub> buffer layer and post metallization annealing (PMA) successfully passivated the electrical defect states, whereas the static charge remained after passivation. High leakage current density was measured for the devices with static charge, which indicates that the leakage current density is attributed to the presence of static charge. To understand this phenomenon, the conduction mechanism of observed <i>I-V</i> curve was analyzed. The device with Al<sub>2</sub>O<sub>3</sub>/Si and Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si structure followed the Poole-Frenkel (PF) emission and energy level of trap states (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\:{{\Phi\:}}_{T}\)</EquationSource> </InlineEquation>) was calculated. For the devices with Al<sub>2</sub>O<sub>3</sub>/Si structure, the trap energy level was calculated to be 0.244&#xa0;eV for the sample without static charge and 0.255&#xa0;eV for the sample with static charge. After inserting the buffer layer, the trap energy level was calculated to be 0.47&#xa0;eV and 0.52&#xa0;eV respectively. After PMA, the device with Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si structure followed the Fowler-Nordheim (FN) tunneling mechanism and barrier height (<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\:{{\Phi\:}}_{b}\)</EquationSource> </InlineEquation>) was calculated to be 1.17&#xa0;eV for the sample without static charge and 0.95&#xa0;eV for the sample with static charge. Through these results, it is expected that the static charge induces the band bending of the insulating layer, resulting in the increase of leakage current density.</p>

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Comparative study of the impact of positive static charge on electrical characteristics of Al2O3/p-Si MOS device

  • 期刊论文

  • 发表日期：

    2025年12月15日

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  • Donghee Lee,
  • Won Jin Kim,
  • Borim Shim,
  • Seung-Hwan Oh,
  • Sang Ouk Ryu,
  • Woo-Byoung Kim

摘要

In this study, the effect of static charge at the interfacial layer of MOS devices is investigated employing Al2O3 dielectric thin film on two different grades of silicon wafers. The presence of the positive static charge caused the inversion capacitance at high frequency and widening of the hysteresis width. Surface passivation methods including the insertion of SiO2 buffer layer and post metallization annealing (PMA) successfully passivated the electrical defect states, whereas the static charge remained after passivation. High leakage current density was measured for the devices with static charge, which indicates that the leakage current density is attributed to the presence of static charge. To understand this phenomenon, the conduction mechanism of observed I-V curve was analyzed. The device with Al2O3/Si and Al2O3/SiO2/Si structure followed the Poole-Frenkel (PF) emission and energy level of trap states ( \(\:{{\Phi\:}}_{T}\) ) was calculated. For the devices with Al2O3/Si structure, the trap energy level was calculated to be 0.244 eV for the sample without static charge and 0.255 eV for the sample with static charge. After inserting the buffer layer, the trap energy level was calculated to be 0.47 eV and 0.52 eV respectively. After PMA, the device with Al2O3/SiO2/Si structure followed the Fowler-Nordheim (FN) tunneling mechanism and barrier height ( \(\:{{\Phi\:}}_{b}\) ) was calculated to be 1.17 eV for the sample without static charge and 0.95 eV for the sample with static charge. Through these results, it is expected that the static charge induces the band bending of the insulating layer, resulting in the increase of leakage current density.