<p>A high-performance room temperature ammonia (NH<sub>3</sub>) gas sensor based on ZnO/Zn<sub>2</sub>SnO<sub>4</sub> composite was synthesized by a one-step hydrothermal method by combining simply prepared zinc oxide (ZnO) with zinc stannate (Zn<sub>2</sub>SnO<sub>4</sub>), which has a high gas-sensitive performance at room temperature. The experimental results show that the response value of ZnO/Zn<sub>2</sub>SnO<sub>4</sub> for 1000 ppm NH<sub>3</sub> is 4364.6, and the response/recovery time is 1.4&#xa0;s/1.2&#xa0;s, respectively, and a minimum detection limit of 0.16 ppm. This is better than that of pure Zn<sub>2</sub>SnO<sub>4</sub>, which has a response value of 151.8, and it is difficult to reach the equilibrium during the adsorption process. Thus, the response/recovery time of ZnO/Zn<sub>2</sub>SnO<sub>4</sub> is faster than that of the current metal oxide semiconductor-based gas sensors. This is due to more oxygen vacancies and oxygen radicals on the ZnO/Zn<sub>2</sub>SnO<sub>4</sub> surface. In addition, the synergistic effect between ZnO and Zn<sub>2</sub>SnO<sub>4</sub> heterojunction accelerates the carrier migration efficiency and improves the gas-sensitive performance. Thus, the ZnO/Zn<sub>2</sub>SnO<sub>4</sub> sensor combines the advantages of room-temperature operation and the simplicity of preparation, and at the same time broadens the application of Zn<sub>2</sub>SnO<sub>4</sub> in the sensor field.</p>

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Preparation and performance study of NH3 sensor based on ZnO/Zn2SnO4 at room temperature

  • Zhipeng Li,
  • Hongyan Zhang,
  • Haiyang Zhang,
  • Jingzhi Hou

摘要

A high-performance room temperature ammonia (NH3) gas sensor based on ZnO/Zn2SnO4 composite was synthesized by a one-step hydrothermal method by combining simply prepared zinc oxide (ZnO) with zinc stannate (Zn2SnO4), which has a high gas-sensitive performance at room temperature. The experimental results show that the response value of ZnO/Zn2SnO4 for 1000 ppm NH3 is 4364.6, and the response/recovery time is 1.4 s/1.2 s, respectively, and a minimum detection limit of 0.16 ppm. This is better than that of pure Zn2SnO4, which has a response value of 151.8, and it is difficult to reach the equilibrium during the adsorption process. Thus, the response/recovery time of ZnO/Zn2SnO4 is faster than that of the current metal oxide semiconductor-based gas sensors. This is due to more oxygen vacancies and oxygen radicals on the ZnO/Zn2SnO4 surface. In addition, the synergistic effect between ZnO and Zn2SnO4 heterojunction accelerates the carrier migration efficiency and improves the gas-sensitive performance. Thus, the ZnO/Zn2SnO4 sensor combines the advantages of room-temperature operation and the simplicity of preparation, and at the same time broadens the application of Zn2SnO4 in the sensor field.