Defect-engineered reduced graphene oxide (rGO) for high-performance supercapacitors: bridging defect chemistry, electrochemical analysis, and scalable energy storage applications
摘要
This study presents original experimental research on defect-engineered reduced graphene oxide (rGO) synthesized via electrochemical exfoliation and argon plasma treatment, aimed at enhancing charge storage capabilities and scalability for high-performance supercapacitors. Supercapacitors are attractive for their high-power density, rapid charge–discharge behavior, and excellent cycling stability, yet suffer from limited energy density (~ 5–10 Wh/kg). While rGO provides tunable conductivity, high surface area, and structural integrity, its basal planes remain largely inert, requiring defect engineering to improve electrochemical activity. Here, a systematic defect-engineering approach involving plasma-induced vacancies, Stone–Wales defects, and heteroatom doping was introduced to increase redox-active sites and ion-accessible regions. Raman spectroscopy confirmed the transformation (ID/IG increase from ~ 0.15 to 1.05), AFM revealed increased nanoscale roughness (thickness ~ 1–2 nm), HR-TEM visualized dislocations, and BET analysis indicated ~ 850 m²/g surface area. XPS confirmed enhanced C–N and C = O functionalities. Electrochemical testing demonstrated specific capacitance up to ~ 400 F/g (via CV area integration) with > 96% retention over 10,000 cycles, while Nyquist analysis confirmed reduced Rct (~ 2.8 Ω) and improved ion transport. Beyond reporting new experimental data, this study evaluates scalability, cost (~$20/g), and industrial relevance. Perspectives on AI-driven defect prediction, hybrid composite integration, and roll-to-roll synthesis are also discussed. Overall, defect-engineered rGO demonstrates strong promise for next-generation supercapacitors, bridging the gap between lab-scale innovation and practical energy storage applications.