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<p>Eu-doped RuO₂ nanostructures with 1, 3, and 5 wt.% doping were synthesized via a hydrothermal method at 180&#xa0;°C for 12&#xa0;h followed by annealing at 450&#xa0;°C. XRD confirmed the rutile tetragonal phase, with diffraction peak shifts toward higher 2θ values reflecting lattice contraction from oxygen vacancy formation. The average crystallite size remained in the nanoregime (14-16&#xa0;nm), ensuring structural stability. FE-SEM revealed a morphological transition from spherical to elongated grains with enhanced connectivity at higher Eu levels, while EDX mapping confirmed uniform Eu distribution. FT-IR and Raman spectra identified Eu-O vibrations, lattice strain, and defect-related modes, consistent with substitutional doping. XPS analysis confirmed the Eu<sup>3</sup>⁺ oxidation state and an increasing contribution from defect-related oxygen species. Dielectric testing demonstrated a marked increase in dielectric constant from 17.75 (pure RuO₂) to 23.60, 33.07, and 43.73 at 1, 3, and 5 wt.% Eu, respectively, representing a ~ 146% improvement at the highest doping. Dielectric loss rose from 2.46 to 14.46 with Eu addition, while AC conductivity increased from 1.09 × 10⁻⁸ S/cm (pure) to a maximum of 2.89 × 10⁻⁸ S/cm at 3 wt.% Eu before decreasing to 1.46 × 10⁻⁸ S/cm at 5 wt.% due to defect clustering. These findings show that controlled Eu doping effectively tailors oxygen vacancy concentration, defect dipole density, and interfacial polarization, enabling significant enhancement of dielectric performance and tunable conductivity. Consequently, Eu-modified RuO₂ is a promising candidate for high-k dielectrics in capacitors, memory devices, and multifunctional optoelectronic systems.</p> Graphical Abstract <p></p>

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Europium-doped ruthenium oxide nanostructures: Hydrothermal synthesis, structural characteristics and dielectric performance

  • 期刊论文

  • 发表日期：

    2025年11月5日

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  • Cevher Kursat Macit,
  • Turan Gurgenc,
  • Ezgi Gurgenc,
  • Fatih Biryan,
  • Cumali Ilkilic,
  • Betül Çiçek Özkan

摘要

Eu-doped RuO₂ nanostructures with 1, 3, and 5 wt.% doping were synthesized via a hydrothermal method at 180 °C for 12 h followed by annealing at 450 °C. XRD confirmed the rutile tetragonal phase, with diffraction peak shifts toward higher 2θ values reflecting lattice contraction from oxygen vacancy formation. The average crystallite size remained in the nanoregime (14-16 nm), ensuring structural stability. FE-SEM revealed a morphological transition from spherical to elongated grains with enhanced connectivity at higher Eu levels, while EDX mapping confirmed uniform Eu distribution. FT-IR and Raman spectra identified Eu-O vibrations, lattice strain, and defect-related modes, consistent with substitutional doping. XPS analysis confirmed the Eu3⁺ oxidation state and an increasing contribution from defect-related oxygen species. Dielectric testing demonstrated a marked increase in dielectric constant from 17.75 (pure RuO₂) to 23.60, 33.07, and 43.73 at 1, 3, and 5 wt.% Eu, respectively, representing a ~ 146% improvement at the highest doping. Dielectric loss rose from 2.46 to 14.46 with Eu addition, while AC conductivity increased from 1.09 × 10⁻⁸ S/cm (pure) to a maximum of 2.89 × 10⁻⁸ S/cm at 3 wt.% Eu before decreasing to 1.46 × 10⁻⁸ S/cm at 5 wt.% due to defect clustering. These findings show that controlled Eu doping effectively tailors oxygen vacancy concentration, defect dipole density, and interfacial polarization, enabling significant enhancement of dielectric performance and tunable conductivity. Consequently, Eu-modified RuO₂ is a promising candidate for high-k dielectrics in capacitors, memory devices, and multifunctional optoelectronic systems.

Graphical Abstract