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<p>In the present study, a manganite-based n–n heterojunction structure comprising CdO//Gd₀.₃Sr₀.₇MnO₃//SrTiO₃ was successfully fabricated using a cost-efficient chemical solution deposition technique. Comprehensive characterization techniques were employed to investigate the structural and functional attributes of the heterostructure. X-ray diffraction confirmed the successful synthesis of the targeted phases, while atomic force microscopy provided insights into the microstructural and grain morphology characteristics. The charge transport behavior was examined through current–voltage measurements, and the optoelectronic properties were explored under varying conditions of illumination and darkness via AC conductivity and impedance spectroscopy. To interpret the frequency-dependent conductivity behavior, theoretical frameworks such as Jonscher’s power law and Cole-Cole Nyquist modeling were applied, which also offered insights into potential barrier heights and carrier trapping/detrapping mechanisms. Furthermore, resistance as a function of time was evaluated at different applied voltages (0.5&#xa0;V, 2&#xa0;V, and 4&#xa0;V) to assess the dynamic electrical stability and responsiveness of the system. The observed electrical characteristics are primarily governed by the dynamics of charge carrier trapping and release, offering valuable information on the stability and conduction mechanisms within the heterojunction.</p>

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Dual-mode (light/dark) electrical and microstructural characterization of CdO//Gd₀.₃Sr₀.₇MnO₃//STO n–n heterojunctions

  • 期刊论文

  • 发表日期：

    2025年11月5日

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  • Mayur Parmar,
  • Nisarg Raval,
  • V. R. Chandegara,
  • Sangita Chavda,
  • H. C. Kamdar,
  • T. C. Pandya,
  • P. S. Solanki,
  • A. D. Joshi,
  • Davit Dhruv,
  • Jashandeep Singh,
  • N. A. Shah,
  • D. D. Pandya

摘要

In the present study, a manganite-based n–n heterojunction structure comprising CdO//Gd₀.₃Sr₀.₇MnO₃//SrTiO₃ was successfully fabricated using a cost-efficient chemical solution deposition technique. Comprehensive characterization techniques were employed to investigate the structural and functional attributes of the heterostructure. X-ray diffraction confirmed the successful synthesis of the targeted phases, while atomic force microscopy provided insights into the microstructural and grain morphology characteristics. The charge transport behavior was examined through current–voltage measurements, and the optoelectronic properties were explored under varying conditions of illumination and darkness via AC conductivity and impedance spectroscopy. To interpret the frequency-dependent conductivity behavior, theoretical frameworks such as Jonscher’s power law and Cole-Cole Nyquist modeling were applied, which also offered insights into potential barrier heights and carrier trapping/detrapping mechanisms. Furthermore, resistance as a function of time was evaluated at different applied voltages (0.5 V, 2 V, and 4 V) to assess the dynamic electrical stability and responsiveness of the system. The observed electrical characteristics are primarily governed by the dynamics of charge carrier trapping and release, offering valuable information on the stability and conduction mechanisms within the heterojunction.