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<p>We investigate the origin of ferromagnetism (FM) and the exceptionally high Curie temperature (<i>T</i><sub><i>C</i></sub>) in undoped SnO<sub>2</sub> films. Ultra-thin SnO<sub>2</sub> films were found to exhibit significant FM, while thicker films show a diamagnetic behavior. Structural and chemical analyses reveal a variation in oxygen vacancy concentrations between thin and thick films. Notably, an exceptionally high <i>T</i><sub><i>C</i></sub> exceeding 800&#xa0;K is observed for the first time. XPS and XAS analyses reveal the presence of oxygen and tin vacancies, which might play a crucial role in the observed magnetism. Theoretically, it was supposed that oxygen vacancies play a crucial role in the FM of SnO<sub>2</sub> films. However, the experimentally observed <i>T</i><sub><i>C</i></sub> surpasses the predicted 505&#xa0;K, suggesting additional contributing factors. This suggests that both oxygen and tin defects might contribute to the total magnetic moment. The findings highlight the key role of defect-induced magnetism in SnO<sub>2</sub> thin films and provide insights into the fundamental mechanism driving high- <i>T</i><sub><i>C</i></sub> FM in undoped oxide semiconductors.</p>

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Pristine SnO2 thin films: origins of high Curie temperature

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月14日

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  • Nguyen Sy Pham,
  • Nguyen Que Huong,
  • Petr Pazourek,
  • Mojmir Meduna,
  • Ondrej Caha,
  • Nguyen Hoa Hong

摘要

We investigate the origin of ferromagnetism (FM) and the exceptionally high Curie temperature (TC) in undoped SnO2 films. Ultra-thin SnO2 films were found to exhibit significant FM, while thicker films show a diamagnetic behavior. Structural and chemical analyses reveal a variation in oxygen vacancy concentrations between thin and thick films. Notably, an exceptionally high TC exceeding 800 K is observed for the first time. XPS and XAS analyses reveal the presence of oxygen and tin vacancies, which might play a crucial role in the observed magnetism. Theoretically, it was supposed that oxygen vacancies play a crucial role in the FM of SnO2 films. However, the experimentally observed TC surpasses the predicted 505 K, suggesting additional contributing factors. This suggests that both oxygen and tin defects might contribute to the total magnetic moment. The findings highlight the key role of defect-induced magnetism in SnO2 thin films and provide insights into the fundamental mechanism driving high- TC FM in undoped oxide semiconductors.