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<p>The properties and applications of the nano/microstructures are greatly influenced by the strain engineering. Band gap of nano/microstructures gets modified due to strain and as a result of that, the properties related to the band gap modulation gets changed. GaN is a semiconducting material and its nanostructures are widely used for optoelectronic applications. We studied the effect of bending strain on GaN microwires at room temperature systematically by recording cathodoluminescence from various points of curved GaN microwire with different bending curvature. It is observed that the band gap decreases with the increase in strain and thus there is a red-shifting in optical emission as recorded from CL spectra. The band gap shifting was about 28 meV for maximum of 3.5% of strain. This indicates that GaN microwires are useful material for flexible optical application device purposes.</p>

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Studies of strain induced behavior from GaN microwire at room temperature studied by cathodoluminescence

  • 期刊论文

  • 发表日期：

    2025年10月16日

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  • Poulami Ghosh,
  • Dapeng Yu,
  • Pijush Kanti Mondal

摘要

The properties and applications of the nano/microstructures are greatly influenced by the strain engineering. Band gap of nano/microstructures gets modified due to strain and as a result of that, the properties related to the band gap modulation gets changed. GaN is a semiconducting material and its nanostructures are widely used for optoelectronic applications. We studied the effect of bending strain on GaN microwires at room temperature systematically by recording cathodoluminescence from various points of curved GaN microwire with different bending curvature. It is observed that the band gap decreases with the increase in strain and thus there is a red-shifting in optical emission as recorded from CL spectra. The band gap shifting was about 28 meV for maximum of 3.5% of strain. This indicates that GaN microwires are useful material for flexible optical application device purposes.