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<p>To enhance the ozone reaction activity of solution-processed indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs), we investigated two approaches for introducing additional hydroxyl (OH) groups, which are known to promote the reactions: (1) spin-coating or firing in a humid environment, and (2) increasing the indium (In) content from the conventional 60% to 72% or 80%. Both approaches enhanced ozone reaction activity, allowing for detection at concentrations as low as 1 ppm. Notably, the enhancement achieved by the second approach was attributed to electrons supplied to the conduction band, originating not only from OH groups but also from In atoms. As a results, the detection limit of a low-cost, solution-processed ozone sensor was significantly lowered from 5 ppm to 1 ppm.</p>

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Enhancement of ozone reaction activity by adding OH groups to solution-processed IGZO-TFTs

  • 期刊论文

  • 发表日期：

    2025年11月26日

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  • Hiroharu Sasajima,
  • Takaaki Morimoto,
  • Seiya Shimono,
  • Loku Singgappulige Rosantha Kumara,
  • Nobuko Fukuda,
  • Keisuke Ishii

摘要

To enhance the ozone reaction activity of solution-processed indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs), we investigated two approaches for introducing additional hydroxyl (OH) groups, which are known to promote the reactions: (1) spin-coating or firing in a humid environment, and (2) increasing the indium (In) content from the conventional 60% to 72% or 80%. Both approaches enhanced ozone reaction activity, allowing for detection at concentrations as low as 1 ppm. Notably, the enhancement achieved by the second approach was attributed to electrons supplied to the conduction band, originating not only from OH groups but also from In atoms. As a results, the detection limit of a low-cost, solution-processed ozone sensor was significantly lowered from 5 ppm to 1 ppm.