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<p>Cu<sub>2</sub>ZnSn(S, Se)<sub>4</sub> (CZTSSe) has emerged as a promising photovoltaic material due to its optimal bandgap and high absorption coefficient. However, the formation of MoSe₂ layer formed at the Mo/CZTSSe interface often detrimentally impacts device performance. In this study, a CdS interlayer was introduced on the Mo back electrode prior to CZTSSe fabrication. The results shown that the crystal quality of CZTSSe thin films was improved with the introduce of CdS interlayer. The chemical reaction at CZTSSe/Mo interface was suppressed. Systematic analysis of photogenerated current density (Jₗ) and diode parameters (Rₛₕ, Rₛ, A, J₀) showed reduced recombination losses. The optimal device achieved a power conversion efficiency (PCE) of 5.89% (vs. 2.01% control) with 17-nm-thick CdS (Cd/(Cd + Zn) = 0.083), attributable to improved carrier collection and reduced interface defects.</p>

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Engineering of cds interlayer for performance enhancement in CZTS solar cells

  • 期刊论文

  • 发表日期：

    2025年9月29日

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  • Xinyi Li,
  • Jinlian Bi,
  • Wei Li,
  • Yupeng Xing

摘要

Cu2ZnSn(S, Se)4 (CZTSSe) has emerged as a promising photovoltaic material due to its optimal bandgap and high absorption coefficient. However, the formation of MoSe₂ layer formed at the Mo/CZTSSe interface often detrimentally impacts device performance. In this study, a CdS interlayer was introduced on the Mo back electrode prior to CZTSSe fabrication. The results shown that the crystal quality of CZTSSe thin films was improved with the introduce of CdS interlayer. The chemical reaction at CZTSSe/Mo interface was suppressed. Systematic analysis of photogenerated current density (Jₗ) and diode parameters (Rₛₕ, Rₛ, A, J₀) showed reduced recombination losses. The optimal device achieved a power conversion efficiency (PCE) of 5.89% (vs. 2.01% control) with 17-nm-thick CdS (Cd/(Cd + Zn) = 0.083), attributable to improved carrier collection and reduced interface defects.