Fabrication of self-powered HfO2 thin film based low-cost solar-blind deep UV photodetector
摘要
The deep ultraviolet photodetector has garnered much attention because of its many uses, from optical communications to defence technologies. In the present work, the growth and optimization of pulsed laser deposition (PLD) grown hafnium oxide (HfO2) thin films and the fabrication of HfO2 thin films based highly rectifying Metal-Semiconductor-Metal (MSM) junction diode in UV-C (100–280 nm) region. The HfO2 thin films absorb considerable light radiations (λ = 254 nm) in the UV-C region implying that HfO2-based MSM junctions can be effectively used as a deep UV photodetector. The photo response has been observed for varying Light intensity from 20 to 700 µW/cm2. At zero bias, the transient photo-response curves of Pt/HfO2/Pt MSM junction diode show high responsivity of 22 mA/W at 20 µW/cm2 And normalized photocurrent to dark current ratio is six orders of magnitude towards UV radiation at An intensity of 700 µW/cm2.