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<p>This study presents a self-powered photodetector based on SiO<sub>x</sub> thin film (TF) deposited on p-Si substrates using electron beam evaporation. Kelvin Probe Force Microscopy (KPFM) measurement reveals the work function of SiO<sub>x</sub> as 4.68&#xa0;eV. Electrical analysis demonstrated a responsivity of 13.2&#xa0;mA/W, a detectivity (D*) of 1.94 × 10<sup>12</sup> Jones, and a noise equivalent power of 5.73 × 10<sup>−14</sup>&#xa0;W. Moreover, the device exhibited a fast-switching response at 0&#xa0;V, with rise and decay times of 0.45&#xa0;s and 0.46&#xa0;s, respectively. These results suggest that the SiO<sub>x</sub> TF device holds great potential for self-powered photodetector applications.</p>

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Fast response self-powered UV photodetector based on SiOx thin film

  • 期刊论文

  • 发表日期：

    2025年8月18日

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  • Rubila Laishram,
  • B. Shakila,
  • M. Prakash,
  • Naorem Khelchand Singh

摘要

This study presents a self-powered photodetector based on SiOx thin film (TF) deposited on p-Si substrates using electron beam evaporation. Kelvin Probe Force Microscopy (KPFM) measurement reveals the work function of SiOx as 4.68 eV. Electrical analysis demonstrated a responsivity of 13.2 mA/W, a detectivity (D*) of 1.94 × 1012 Jones, and a noise equivalent power of 5.73 × 10−14 W. Moreover, the device exhibited a fast-switching response at 0 V, with rise and decay times of 0.45 s and 0.46 s, respectively. These results suggest that the SiOx TF device holds great potential for self-powered photodetector applications.