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<p>In this work, we used a mathematical model for grain size in vertical organic field-effect transistors (VOFETs) to calculate electrical characteristics (output (drain current I<sub>d</sub>- drain voltage V<sub>d</sub>) and transfer (drain current I<sub>d</sub>- gate voltage V<sub>g</sub>)) and by utilizing different values for the thickness of the semiconductor (t<sub>s</sub>=900, 500, and 300&#xa0;nm) to improve the device performance. As the active layer of the transistors is rubrene, the gate insulator is poly(ethyl a-chloroacrylate). Moreover, the study shows that rubrene exhibits the typical output and transfer properties of p-type VOFETs. The best results of the drain current for output and transfer properties are at a thickness of the semiconductor (t<sub>s</sub>=300&#xa0;nm), and a voltage gate of V<sub>g</sub>=-60&#xa0;V. The study found that as the grain size values increase, both the mobility and µ<sub>eff</sub> values increase rapidly with the gate voltage when the gate voltage values are low, regardless of grain size. The best value obtained for the effective carrier mobility is 0.6733 × 10<sup>−3</sup> m²/V.s, when the value of the grain size is L<sub>G</sub>=200&#xa0;nm and the grain boundary size is L<sub>GB</sub>=2&#xa0;nm, as the study noted the value of the switching ratio (I<sub>on</sub>/I<sub>off</sub>) was large at the thickness of the semiconductor (t<sub>s</sub>=300&#xa0;nm).</p>

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Effect of the thickness of semiconductor on the performance vertical organic field effect transistor by using grain size model

  • 期刊论文

  • 发表日期：

    2025年8月20日

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  • Bushra H. Mohammed,
  • Estabraq Talib Abdullah

摘要

In this work, we used a mathematical model for grain size in vertical organic field-effect transistors (VOFETs) to calculate electrical characteristics (output (drain current Id- drain voltage Vd) and transfer (drain current Id- gate voltage Vg)) and by utilizing different values for the thickness of the semiconductor (ts=900, 500, and 300 nm) to improve the device performance. As the active layer of the transistors is rubrene, the gate insulator is poly(ethyl a-chloroacrylate). Moreover, the study shows that rubrene exhibits the typical output and transfer properties of p-type VOFETs. The best results of the drain current for output and transfer properties are at a thickness of the semiconductor (ts=300 nm), and a voltage gate of Vg=-60 V. The study found that as the grain size values increase, both the mobility and µeff values increase rapidly with the gate voltage when the gate voltage values are low, regardless of grain size. The best value obtained for the effective carrier mobility is 0.6733 × 10−3 m²/V.s, when the value of the grain size is LG=200 nm and the grain boundary size is LGB=2 nm, as the study noted the value of the switching ratio (Ion/Ioff) was large at the thickness of the semiconductor (ts=300 nm).