<p>As electronic devices continue to miniaturize and their integration density increases, the demand for suitable interconnecting materials has risen significantly. This study investigated the electrical resistivity and thermal stability of Mo thin films to explore their suitability for next-generation metallization applications. The resistivity of the Mo thin films deposited at the ambient temperature decreased as the Ar working pressure decreased and the sputtering power and film thickness increased. This reduction in resistivity is attributed to the improved crystallinity of the Mo thin film under the employed deposition conditions. The films annealed under high vacuum did not exhibit a significant increase in resistivity. Instead, they maintained a smooth surface without particle agglomeration after annealing treatment, demonstrating their structural stability during high-temperature processing. Mo thin films deposited at elevated temperatures exhibited a substantial decrease in their resistivity. Notably, the Mo thin films grown at high temperatures showed no diffusion-induced formation of secondary phases on the SiO₂ layers or Si substrates, indicating their excellent stability during high-temperature processing. These findings demonstrate the significant potential of Mo thin films for applications requiring high-temperature stability and compatibility with Si-based platforms.</p>