Scholarlink

<p>The miniaturization of microelectronics demands precise silicon wafer thinning, where conventional mechanical dicing introduces undesirable stress and defects, making laser scribing a viable alternative as a non-contact processing method. This study explores picosecond laser scribing of silicon wafer, aiming to analyze the scribing morphology and groove dimensions under different process parameters. A two-dimensional axisymmetric two-temperature model was developed to investigate the temperature distribution, phase transitions, and material removal mechanisms during the ablation process in picosecond laser scribing. The effects of pulse energy (ranging from 2.6 µJ to 16.8 µJ) and overlap rate of the laser beam (ranging from 0 to 95%) on the scribing process were systematically explored. The transition from discrete ablation points to undulating groove at the bottom and then to a continuous scribe line with increasing pulse energy and overlap rate is revealed. At 2.6 µJ pulse energy and 75% overlap rate, a wave-like pattern was observed, indicating that the silicon surface is molten during the pulse interval. Quantitative analysis of the dimensions of groove and recast layer shows a direct correlation with the process parameters. The results show that the groove width is mainly affected by the pulse energy. Higher overlap rates result in significant increase in groove depth, but also lead to substantial heat accumulation, evidenced by pronounced recast layers and altered scribing morphology. The relationship between material ablation rate (MAR), single pulse ablation rate (SPAR) and process parameters is investigated. The results reveal that there is a direct linear relationship between pulse energy and MAR. Additionally, higher overlap rates are found to enhance the MAR, particularly when the overlap rate exceeds 90%. However, the SPAR remains relatively stable for different overlap rates, except for the condition of high energy and high overlap rate, where the SPAR increases significantly. These findings inform the precise control of picosecond laser parameters, which is beneficial for advancing microelectronics manufacturing.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Investigation of surface morphology and dimensions in picosecond laser scribing of silicon wafer

  • 期刊论文

  • 发表日期：

    2025年8月5日

查看全文
  • Zhuang Shu,
  • Chongxin Tian,
  • Yanmei Zhang,
  • Zhiyong Li,
  • Peng Li,
  • Xiuli He,
  • Shaoxia Li,
  • Gang Yu

摘要

The miniaturization of microelectronics demands precise silicon wafer thinning, where conventional mechanical dicing introduces undesirable stress and defects, making laser scribing a viable alternative as a non-contact processing method. This study explores picosecond laser scribing of silicon wafer, aiming to analyze the scribing morphology and groove dimensions under different process parameters. A two-dimensional axisymmetric two-temperature model was developed to investigate the temperature distribution, phase transitions, and material removal mechanisms during the ablation process in picosecond laser scribing. The effects of pulse energy (ranging from 2.6 µJ to 16.8 µJ) and overlap rate of the laser beam (ranging from 0 to 95%) on the scribing process were systematically explored. The transition from discrete ablation points to undulating groove at the bottom and then to a continuous scribe line with increasing pulse energy and overlap rate is revealed. At 2.6 µJ pulse energy and 75% overlap rate, a wave-like pattern was observed, indicating that the silicon surface is molten during the pulse interval. Quantitative analysis of the dimensions of groove and recast layer shows a direct correlation with the process parameters. The results show that the groove width is mainly affected by the pulse energy. Higher overlap rates result in significant increase in groove depth, but also lead to substantial heat accumulation, evidenced by pronounced recast layers and altered scribing morphology. The relationship between material ablation rate (MAR), single pulse ablation rate (SPAR) and process parameters is investigated. The results reveal that there is a direct linear relationship between pulse energy and MAR. Additionally, higher overlap rates are found to enhance the MAR, particularly when the overlap rate exceeds 90%. However, the SPAR remains relatively stable for different overlap rates, except for the condition of high energy and high overlap rate, where the SPAR increases significantly. These findings inform the precise control of picosecond laser parameters, which is beneficial for advancing microelectronics manufacturing.