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<p>With an asymmetric double triangular confinement potential, we exploit a revolutionary GaAs/AlGaAs core-multishell quantum dot enabling fine-tuning of optoelectronic attributes in presence of an oxidative layers (SiO<sub>2</sub> versus HfO<sub>2</sub>) when the impurity’s consequences are numerically included. Discrete energies along with wavefunction distribution were resolved under the scope of effective mass model and parabolic band approaches. Analytical formulas associated to real and imaginary parts of the effective complex dielectric function are established under the compact density matrix technique and the recursive technique. Theoretical computations pointed to drastic changes in resonance frequencies are primarily attributed to asymmetry and the oxidative environment, with impurities playing a less significant role. A more significant blueshift occurs when the structure exhibits an asymmetric triangular potential alongside a high-permittivity oxidative layer. Compared to the symmetric structure, the asymmetric design exhibits a significantly enhanced dipole matrix element offering unique possibilities for optimizing performance in photon-electronic components and quantum sensors. The energy spectrum is shaped by critical factors (symmetry, encapsulating oxides, impurity presence and well widths) that enable flexible control of computed nonlinear components. In the SiO₂-embedded system, the transition energy between the ground and first excited states is found to be 1.52 times higher in the absence of the impurity. In the presence of HfO₂ encapsulation, the imaginary part of the effective complex dielectric function reached a peak value of 0.108 for the symmetric configuration, while a significantly higher value of 0.168 is attained in the asymmetric counterpart. This enhancement is accompanied by a distinct blueshift in the resonance frequency which can be attributed to stronger quantum confinement and asymmetry-induced modifications in the electronic structure, ultimately resulting in amplified optical response. Under higher illumination intensities, we found that an asymmetric quantum well near an oxide coating prevents the detrimental splitting of the imaginary part.</p>

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Inspection-based study of the effective complex dielectric function in symmetric and asymmetric double triangular quantum dots: impurity influence and oxidative layer effects

  • 期刊论文

  • 发表日期：

    2025年8月21日

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  • A. Naifar,
  • K. Hasanirokh

摘要

With an asymmetric double triangular confinement potential, we exploit a revolutionary GaAs/AlGaAs core-multishell quantum dot enabling fine-tuning of optoelectronic attributes in presence of an oxidative layers (SiO2 versus HfO2) when the impurity’s consequences are numerically included. Discrete energies along with wavefunction distribution were resolved under the scope of effective mass model and parabolic band approaches. Analytical formulas associated to real and imaginary parts of the effective complex dielectric function are established under the compact density matrix technique and the recursive technique. Theoretical computations pointed to drastic changes in resonance frequencies are primarily attributed to asymmetry and the oxidative environment, with impurities playing a less significant role. A more significant blueshift occurs when the structure exhibits an asymmetric triangular potential alongside a high-permittivity oxidative layer. Compared to the symmetric structure, the asymmetric design exhibits a significantly enhanced dipole matrix element offering unique possibilities for optimizing performance in photon-electronic components and quantum sensors. The energy spectrum is shaped by critical factors (symmetry, encapsulating oxides, impurity presence and well widths) that enable flexible control of computed nonlinear components. In the SiO₂-embedded system, the transition energy between the ground and first excited states is found to be 1.52 times higher in the absence of the impurity. In the presence of HfO₂ encapsulation, the imaginary part of the effective complex dielectric function reached a peak value of 0.108 for the symmetric configuration, while a significantly higher value of 0.168 is attained in the asymmetric counterpart. This enhancement is accompanied by a distinct blueshift in the resonance frequency which can be attributed to stronger quantum confinement and asymmetry-induced modifications in the electronic structure, ultimately resulting in amplified optical response. Under higher illumination intensities, we found that an asymmetric quantum well near an oxide coating prevents the detrimental splitting of the imaginary part.