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<p>Aluminum nitride (AlN) has emerged as a critical multifunctional material in the semiconductor industry. However, in practical applications, high-quality AlN films prepared at high temperatures via the metal-organic chemical vapor deposition (MOCVD) method still face challenges such as film cracking and high residual stress, which significantly degrade the performance of devices based on them. This study successfully fabricated 250&#xa0;nm-thick AlN film on silicon (111) substrate using MOCVD by introducing a two-step deposition method and optimizing the low-temperature (LT) AlN interlayer, achieving superior crystal quality without cracks. Characterization of the fabricated MOCVD-AlN films revealed that the full width at half maximum (FWHM) of the AlN (002) orientation increased from <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="339_2025_8680_Article_IEq1.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="45" /> </InlineMediaObject> <EquationSource Format="TEX">\({0.256^ \circ }\)</EquationSource> </InlineEquation> to <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="339_2025_8680_Article_IEq2.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="37" /> </InlineMediaObject> <EquationSource Format="TEX">\({0.72^ \circ }\)</EquationSource> </InlineEquation> as the LT deposition temperature (<i>T</i><sub><i>LT</i></sub>) rose from 900 ℃ to 1120 ℃. Atomic force microscopy (AFM) results demonstrated that the surface roughness of the AlN film decreased from 2.32&#xa0;nm to 0.431&#xa0;nm, while the residual stress of the films decreased nonlinearly from 2412&#xa0;MPa to 1692&#xa0;MPa as <i>T</i><sub><i>LT</i></sub> increased from 900 ℃ to 1230 ℃. This work highlights advancements in low residual stress, crack-free and more robust AlN film deposition, emphasizing their potential for MOCVD-AlN-based devices.</p>

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Impact of low-temperature AlN interlayer on quality and residual stress of AlN films deposited by MOCVD on Si (111) substrate

  • 期刊论文

  • 发表日期：

    2025年6月19日

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  • Yaxin Wang,
  • Binghui Lin,
  • Yuqi Ren,
  • Tingting Yang,
  • Chaoxiang Yang,
  • Yao Cai,
  • Chengliang Sun

摘要

Aluminum nitride (AlN) has emerged as a critical multifunctional material in the semiconductor industry. However, in practical applications, high-quality AlN films prepared at high temperatures via the metal-organic chemical vapor deposition (MOCVD) method still face challenges such as film cracking and high residual stress, which significantly degrade the performance of devices based on them. This study successfully fabricated 250 nm-thick AlN film on silicon (111) substrate using MOCVD by introducing a two-step deposition method and optimizing the low-temperature (LT) AlN interlayer, achieving superior crystal quality without cracks. Characterization of the fabricated MOCVD-AlN films revealed that the full width at half maximum (FWHM) of the AlN (002) orientation increased from \({0.256^ \circ }\) to \({0.72^ \circ }\) as the LT deposition temperature (TLT) rose from 900 ℃ to 1120 ℃. Atomic force microscopy (AFM) results demonstrated that the surface roughness of the AlN film decreased from 2.32 nm to 0.431 nm, while the residual stress of the films decreased nonlinearly from 2412 MPa to 1692 MPa as TLT increased from 900 ℃ to 1230 ℃. This work highlights advancements in low residual stress, crack-free and more robust AlN film deposition, emphasizing their potential for MOCVD-AlN-based devices.