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<p>This paper investigates the performance of Organic Field Effect Transistors (OFETs) using sexithiophene as the active organic semiconductor. The study focuses on two key device architectures: Bottom Gate Top Contact (BGTC) and Bottom Gate Bottom Contact (BGBC). Using advanced simulation techniques with the Silvaco Atlas tool, we examine the electrical properties of both configurations, including charge carrier mobility and contact resistance. Results show that the BGBC configuration significantly outperforms the BGTC structure due to its improved charge transport efficiency. The enhanced mobility of the BGBC structure makes it a promising candidate for high-performance OFET applications, particularly in flexible and large-area electronics. This comparative analysis offers valuable insights into optimizing OFET design for future applications in organic semiconductor technology. The contact resistance of the bottom contact structure (3.933 × 104 Ω) was found to be higher than that of the top contact structure (1.887 × 104 Ω). This higher resistance reduces the movement of charge carriers in the semiconductor, which lowers the drain-source current.</p>

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Modelling and simulation of organic (Sexithiophene) field effect transistors (OFETs)

  • 期刊论文

  • 发表日期：

    2025年6月10日

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  • Sandeep Kumar Dhaka,
  • Sushila,
  • Manu Faujdar,
  • Sachin Saini,
  • Shubham Daharwal

摘要

This paper investigates the performance of Organic Field Effect Transistors (OFETs) using sexithiophene as the active organic semiconductor. The study focuses on two key device architectures: Bottom Gate Top Contact (BGTC) and Bottom Gate Bottom Contact (BGBC). Using advanced simulation techniques with the Silvaco Atlas tool, we examine the electrical properties of both configurations, including charge carrier mobility and contact resistance. Results show that the BGBC configuration significantly outperforms the BGTC structure due to its improved charge transport efficiency. The enhanced mobility of the BGBC structure makes it a promising candidate for high-performance OFET applications, particularly in flexible and large-area electronics. This comparative analysis offers valuable insights into optimizing OFET design for future applications in organic semiconductor technology. The contact resistance of the bottom contact structure (3.933 × 104 Ω) was found to be higher than that of the top contact structure (1.887 × 104 Ω). This higher resistance reduces the movement of charge carriers in the semiconductor, which lowers the drain-source current.