High-temperature dielectric and electric modulus relaxation behavior of BaZr0.85Ho0.10Y0.025Nd0.025O3-δ ceramic
摘要
The dielectric and electric modulus properties of BaZr0.85Ho0.10Y0.025Nd0.025O3-δ ceramic were studied in the broad range of frequency and temperature to understand the relaxation mechanism in the material. The two relaxation peaks were observed in the frequency-dependent imaginary part of electric modulus, which could be associated with the contribution of grain and grain boundary (GB). The frequency-dependent