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<p>We demonstrated laser doping of silicon carbide (SiC) with a KrF excimer laser at a high repetition rate of 4000&#xa0;Hz to improve throughput. As an n-type dopant source, a silicon nitride (SiN) film with a thickness of 100&#xa0;nm was deposited onto the SiC surface before irradiation. Secondary-ion mass spectroscopy revealed that the nitrogen concentration in SiC exceeded 10<sup>21</sup>&#xa0;cm<sup>-3</sup>. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed a SiO<sub>x</sub> layer and graphite on the SiC surface after irradiation. Amorphous Si was present beneath the SiO<sub>x</sub> layer, while the SiN film was not present. Although contrast change was observed in the SiC, the bottom part maintained the crystalline structure. The specific contact resistance was also measured. Its minimum value was 1.0 × 10<sup>− 5</sup> cm<sup>2</sup>. We report the results of laser doping in terms of surface conditions and specific contact resistance.</p>

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Demonstration of low contact resistance in SiC using high-repetition-rate KrF excimer laser irradiation

  • 期刊论文

  • 发表日期：

    2025年6月20日

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  • Kaname Imokawa,
  • Yohei Tanaka,
  • Keita Katayama,
  • Hisato Yabuta,
  • Taisuke Miura,
  • Kouji Kakizaki

摘要

We demonstrated laser doping of silicon carbide (SiC) with a KrF excimer laser at a high repetition rate of 4000 Hz to improve throughput. As an n-type dopant source, a silicon nitride (SiN) film with a thickness of 100 nm was deposited onto the SiC surface before irradiation. Secondary-ion mass spectroscopy revealed that the nitrogen concentration in SiC exceeded 1021 cm-3. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed a SiOx layer and graphite on the SiC surface after irradiation. Amorphous Si was present beneath the SiOx layer, while the SiN film was not present. Although contrast change was observed in the SiC, the bottom part maintained the crystalline structure. The specific contact resistance was also measured. Its minimum value was 1.0 × 10− 5 cm2. We report the results of laser doping in terms of surface conditions and specific contact resistance.