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<p>This study utilizes the Moore-Gibson-Thompson (MGT) model, enhanced by a tempered generalized Caputo fractional derivative, to investigate photothermal processes in rotating semiconducting materials. The MGT framework is chosen for its incorporation of finite thermal wave speeds, overcoming the limitations of classical heat conduction models such as Fourier’s law. This approach is particularly well-suited for semiconductors under rotational effects and rectified sine-varying heat sources, where thermal behavior is governed by coupled mechanical and electromagnetic fields. The tempered generalized Caputo fractional derivative enables the model to account for anomalous diffusion and memory-dependent effects, offering a more robust representation of complex thermal dynamics. Rotational motion is integrated into the governing equations through rotational terms, assuming uniform rotation and isotropic material properties. Both analytical and numerical methods are employed to solve the system. The results indicate that the fractional MGT model provides more accurate predictions of photothermal responses in rotating semiconductors, especially under high-frequency excitation, and aligns closely with experimental data. These insights are particularly valuable for optoelectronic and solar energy applications, where precise thermal regulation is essential. However, the study acknowledges certain limitations, including the assumptions of uniform rotation and material homogeneity. Future research directions could explore non-uniform heating, material defects, and coupled thermo-electronic interactions to further refine the model.</p>

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Fractional MGT model for photothermal analysis in rotating semiconductors: insights into anomalous diffusion and thermal wave propagation

  • 期刊论文

  • 发表日期：

    2025年5月30日

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  • Ahmed E. Abouelregal,
  • Yazeed Alhassan,
  • Salman S. Alsaeed,
  • Mohamed E. Elzayady,
  • Hamid M. Sedighi,
  • Mohammad Kordi

摘要

This study utilizes the Moore-Gibson-Thompson (MGT) model, enhanced by a tempered generalized Caputo fractional derivative, to investigate photothermal processes in rotating semiconducting materials. The MGT framework is chosen for its incorporation of finite thermal wave speeds, overcoming the limitations of classical heat conduction models such as Fourier’s law. This approach is particularly well-suited for semiconductors under rotational effects and rectified sine-varying heat sources, where thermal behavior is governed by coupled mechanical and electromagnetic fields. The tempered generalized Caputo fractional derivative enables the model to account for anomalous diffusion and memory-dependent effects, offering a more robust representation of complex thermal dynamics. Rotational motion is integrated into the governing equations through rotational terms, assuming uniform rotation and isotropic material properties. Both analytical and numerical methods are employed to solve the system. The results indicate that the fractional MGT model provides more accurate predictions of photothermal responses in rotating semiconductors, especially under high-frequency excitation, and aligns closely with experimental data. These insights are particularly valuable for optoelectronic and solar energy applications, where precise thermal regulation is essential. However, the study acknowledges certain limitations, including the assumptions of uniform rotation and material homogeneity. Future research directions could explore non-uniform heating, material defects, and coupled thermo-electronic interactions to further refine the model.