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<p>(111)-oriented 5%La: HfO<sub>2</sub> (HLO) thin films have been successfully deposited on La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> buffered (111)-oriented SrTiO<sub>3</sub> (STO) substrates by pulsed laser deposition. The growth of the orthorhombic HLO films with a rhombohedral distortion follows a domain matching epitaxy mechanism and twin domains appear as revealed by atomic resolution scanning transmission electron microscopy. These (111)-oriented HLO films show 6-fold in-plane symmetry due to the twin domains rotated 180° to each other around the surface normal. The HLO films, 15&#xa0;nm in thickness, on (111)-oriented STO exhibit robust ferroelectric properties with an optimized remanent polarization around 13 µC/cm<sup>2</sup> without any wake-up process.</p>

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Epitaxial La: HfO2 films deposited on (111)-oriented SrTiO3

  • 期刊论文

  • 发表日期：

    2025年4月18日

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  • Mingkai Qing,
  • Peijie Jiao,
  • Hongying Chen,
  • Zhiyu Liu,
  • Yu Deng,
  • Di Wu

摘要

(111)-oriented 5%La: HfO2 (HLO) thin films have been successfully deposited on La0.67Sr0.33MnO3 buffered (111)-oriented SrTiO3 (STO) substrates by pulsed laser deposition. The growth of the orthorhombic HLO films with a rhombohedral distortion follows a domain matching epitaxy mechanism and twin domains appear as revealed by atomic resolution scanning transmission electron microscopy. These (111)-oriented HLO films show 6-fold in-plane symmetry due to the twin domains rotated 180° to each other around the surface normal. The HLO films, 15 nm in thickness, on (111)-oriented STO exhibit robust ferroelectric properties with an optimized remanent polarization around 13 µC/cm2 without any wake-up process.