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<p>Zn<sub>1−x</sub>Mg<sub>x</sub>O semiconductor film has been widely applied in the optical, electronic and optoelectronic field, due to the excellent transmittance, adjustable band gap, and environmental friendliness. Herein, Zn<sub>1−x</sub>Mg<sub>x</sub>O films with different <i>x</i> values were fabricated by plasma-enhanced atomic layer deposition (PEALD). The effects of Mg doping content (<i>x</i> value) on the structural, optical and electrical properties of Zn<sub>1−x</sub>Mg<sub>x</sub>O were systematically investigated. As the increase of Mg doping content, the crystallization and the average grain size of Zn<sub>1−x</sub>Mg<sub>x</sub>O film show the first increasing and then decreasing trend. The absorption edge is shifted towards the direction of shorter wavelength, and the band gap is widened, with the increase of Mg doping content. The resistivity value of film enlarges with the increase of Mg doping content. The energy of conduction band minimum (<i>E</i><sub>CBM</sub>) of Zn<sub>1−x</sub>Mg<sub>x</sub>O is elevated by Mg doping. As the buffer layer for CZTSSe, a suitable conduction band offset can be simply obtained. Therefore, the properties of Zn<sub>1−x</sub>Mg<sub>x</sub>O can be accurately adjusted via controlling the Mg doping content.</p>

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Zn1−xMgxO film with adjustable properties fabricated by plasma-enhanced atomic layer deposition (PEALD)

  • 期刊论文

  • 发表日期：

    2025年4月17日

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  • Xuyuan Chen,
  • Wenning Zhao,
  • Xiaohui Tan,
  • Xiuxun Han

摘要

Zn1−xMgxO semiconductor film has been widely applied in the optical, electronic and optoelectronic field, due to the excellent transmittance, adjustable band gap, and environmental friendliness. Herein, Zn1−xMgxO films with different x values were fabricated by plasma-enhanced atomic layer deposition (PEALD). The effects of Mg doping content (x value) on the structural, optical and electrical properties of Zn1−xMgxO were systematically investigated. As the increase of Mg doping content, the crystallization and the average grain size of Zn1−xMgxO film show the first increasing and then decreasing trend. The absorption edge is shifted towards the direction of shorter wavelength, and the band gap is widened, with the increase of Mg doping content. The resistivity value of film enlarges with the increase of Mg doping content. The energy of conduction band minimum (ECBM) of Zn1−xMgxO is elevated by Mg doping. As the buffer layer for CZTSSe, a suitable conduction band offset can be simply obtained. Therefore, the properties of Zn1−xMgxO can be accurately adjusted via controlling the Mg doping content.