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<p>In this study, the thermoelectric properties of AlPbTe<sub>2</sub> thin films are investigated with a focus on the effects of post-annealing on their structural, electrical, and thermoelectric performance. X-ray diffraction (XRD) analysis reveals that the maximum peak intensity is observed after 1&#xa0;h of post-annealing, with a subsequent decrease in intensity up to 3&#xa0;h, while additional peaks become more prominent in the 3-hour sample, indicating enhanced polycrystallinity. Scanning electron microscope (SEM) images show grain growth and structural changes with post-annealing time, where small grains coalesce into larger grains, followed by crack formation after 3&#xa0;h of annealing. Electrical conductivity increases from 320&#xa0;S/cm in the as-grown sample to 545&#xa0;S/cm in the 3-hour post-annealed sample, although conductivity decreases with increasing measurement temperature from 300 to 450&#xa0;K, due to phonon scattering. The charge carrier concentration also increases significantly from 1.05 × 10<sup>20</sup> cm<sup>− 3</sup> to 2.59 × 10<sup>20</sup> cm<sup>− 3</sup> after 3&#xa0;h of post-annealing, while charge carrier mobility decreases due to carrier-carrier scattering. The Seebeck coefficient is negative, confirming n-type behavior, and increases with temperature across all samples. The 1-hour post-annealed sample shows the highest Seebeck coefficient, peaking at 242 µV/K at 450&#xa0;K. Finally, the thermoelectric power factor of the 1-hour post-annealed sample reaches a maximum of 24.4 µWcm<sup>− 1</sup>K<sup>− 2</sup> at 400&#xa0;K, highlighting the improved thermoelectric performance at mid-temperatures.</p>

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Investigating the thermoelectric power factor of AlPbTe2 thin film grown by thermal evaporation route

  • 期刊论文

  • 发表日期：

    2025年3月31日

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  • M. Yasir Ali,
  • Adnan Ali,
  • Khalid Mehmood,
  • Ahmed H. Ragab,
  • Meznah M. Alanazi,
  • Tagreed Wael Alghamdi,
  • Arslan Ashfaq

摘要

In this study, the thermoelectric properties of AlPbTe2 thin films are investigated with a focus on the effects of post-annealing on their structural, electrical, and thermoelectric performance. X-ray diffraction (XRD) analysis reveals that the maximum peak intensity is observed after 1 h of post-annealing, with a subsequent decrease in intensity up to 3 h, while additional peaks become more prominent in the 3-hour sample, indicating enhanced polycrystallinity. Scanning electron microscope (SEM) images show grain growth and structural changes with post-annealing time, where small grains coalesce into larger grains, followed by crack formation after 3 h of annealing. Electrical conductivity increases from 320 S/cm in the as-grown sample to 545 S/cm in the 3-hour post-annealed sample, although conductivity decreases with increasing measurement temperature from 300 to 450 K, due to phonon scattering. The charge carrier concentration also increases significantly from 1.05 × 1020 cm− 3 to 2.59 × 1020 cm− 3 after 3 h of post-annealing, while charge carrier mobility decreases due to carrier-carrier scattering. The Seebeck coefficient is negative, confirming n-type behavior, and increases with temperature across all samples. The 1-hour post-annealed sample shows the highest Seebeck coefficient, peaking at 242 µV/K at 450 K. Finally, the thermoelectric power factor of the 1-hour post-annealed sample reaches a maximum of 24.4 µWcm− 1K− 2 at 400 K, highlighting the improved thermoelectric performance at mid-temperatures.