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<p>In this paper we report the negative photoconductivity in Hg<sub>1 − x</sub> Cd<sub>x</sub>Te (Mercury-Cadmium-Telluride – MCT) under millimeter light illumination observed experimentally in MCT thin layers. We investigated photoconductivity in thin layers of narrow-gap Hg<sub>1 − x</sub> Cd<sub>x</sub>Te of different composition (from x = 0.2 to x = 0.305) and conductivity type (both n- and p-type) that were grown epitaxially or obtained by mechanical and chemical thinning of MCT single crystals and integrated with metal antennas. The temperature dependences of the photoresponse were obtained theoretically and experimentally in the temperature range of 77..300&#xa0;K in which both positive and negative photoconductivity were observed. The reasons that may cause the negative photoconductivity at different conditions are considered within the framework of the hot electron bolometer model. It was found that not only parameters of the semiconductor, dimensions of the sample and its temperature, but also the dimensions of an antenna and the properties of its contact with the semiconductor impact the photoconductivity.</p>

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Negative photoconductivity in HgCdTe layers under illumination with millimeter waves

  • 期刊论文

  • 发表日期：

    2025年3月31日

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  • Nataliia Kukhtaruk,
  • Fedir Sizov,
  • Viacheslav Zabudsky,
  • Zinoviia Tsybrii,
  • Ihor Lysiuk

摘要

In this paper we report the negative photoconductivity in Hg1 − x CdxTe (Mercury-Cadmium-Telluride – MCT) under millimeter light illumination observed experimentally in MCT thin layers. We investigated photoconductivity in thin layers of narrow-gap Hg1 − x CdxTe of different composition (from x = 0.2 to x = 0.305) and conductivity type (both n- and p-type) that were grown epitaxially or obtained by mechanical and chemical thinning of MCT single crystals and integrated with metal antennas. The temperature dependences of the photoresponse were obtained theoretically and experimentally in the temperature range of 77..300 K in which both positive and negative photoconductivity were observed. The reasons that may cause the negative photoconductivity at different conditions are considered within the framework of the hot electron bolometer model. It was found that not only parameters of the semiconductor, dimensions of the sample and its temperature, but also the dimensions of an antenna and the properties of its contact with the semiconductor impact the photoconductivity.