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<p>ITO/Cu/ITO multilayer films, consisting of indium tin oxide (ITO) and an intermediate copper (Cu) film with a thickness of 5&#xa0;nm and a total thickness of 85&#xa0;nm (ITO (40&#xa0;nm)/Cu (5&#xa0;nm)/ITO (40&#xa0;nm)) (ICI), were deposited on glass substrates using radiofrequency (RF) cathodic sputtering without intentional substrate heating. The effect of vacuum annealing on the optoelectronic properties and microstructure of the films was investigated by varying the annealing temperature from 25&#xa0;°C to 400&#xa0;°C. The results showed that the well-defined diffraction peaks appeared at 400&#xa0;°C, with preferred orientations along (222), (400), and (440) planes. the volume density remained constant by increasing the annealing temperature. The multilayer films exhibited a maximum transmittance of 75% in the visible region, with an optical bandgap ranged from 3.77 to 4.15&#xa0;eV. The sheet resistance generally decreased with annealing, reaching 25 Ω/sq, while the lowest electrical resistivity of 2.3 × 10⁻⁴ Ω·cm was achieved at 400&#xa0;°C. Additionally, the power factor increased with annealing temperature up to 400&#xa0;°C. These findings demonstrate the significant potential of ITO/Cu/ITO multilayer films for various applications.</p>

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Investigation of the structural, optical, thermoelectric and electrical properties of ITO/Cu/ITO multilayer

  • 期刊论文

  • 发表日期：

    2025年3月24日

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  • Abdelaziz Tchenka,
  • Lahoucine Amiri,
  • Mohammed Bousseta,
  • Mouhcine Ourbaa,
  • Hind El Aakib,
  • Elmaati Ech-Chamikh

摘要

ITO/Cu/ITO multilayer films, consisting of indium tin oxide (ITO) and an intermediate copper (Cu) film with a thickness of 5 nm and a total thickness of 85 nm (ITO (40 nm)/Cu (5 nm)/ITO (40 nm)) (ICI), were deposited on glass substrates using radiofrequency (RF) cathodic sputtering without intentional substrate heating. The effect of vacuum annealing on the optoelectronic properties and microstructure of the films was investigated by varying the annealing temperature from 25 °C to 400 °C. The results showed that the well-defined diffraction peaks appeared at 400 °C, with preferred orientations along (222), (400), and (440) planes. the volume density remained constant by increasing the annealing temperature. The multilayer films exhibited a maximum transmittance of 75% in the visible region, with an optical bandgap ranged from 3.77 to 4.15 eV. The sheet resistance generally decreased with annealing, reaching 25 Ω/sq, while the lowest electrical resistivity of 2.3 × 10⁻⁴ Ω·cm was achieved at 400 °C. Additionally, the power factor increased with annealing temperature up to 400 °C. These findings demonstrate the significant potential of ITO/Cu/ITO multilayer films for various applications.